Week In Review: Manufacturing, Test


Packaging and test Taiwan’s ASE--the world’s largest OSAT--has announced the proposed sale and disposal of equity interests in its subsidiaries, GAPT Holding and ASE (Kun Shan), to Wise Road Capital, a private equity firm based in China. The deal has a value of $1.46 billion. The announcement is related to four ASE assembly and test facilities in China, including Shanghai, Suzhou, Kunsh... » read more

Week In Review: Manufacturing, Test


Chipmakers China’s Tsinghua Unigroup is in trouble. The group is the parent company of China’s YMTC, a 3D NAND supplier, and other chip ventures. It is close to moving into bankruptcy proceedings. Now, a consortium led by Alibaba has emerged as the frontrunner to take over Tsinghua Unigroup, according to a report from Bloomberg. That deal would keep the company afloat, the report said. ... » read more

Outlook: DRAM, NAND, Next-Gen Memory


Jim Handy, director at Objective Analysis, sat down with Semiconductor Engineering to talk about the 3D NAND, DRAM and next-generation memory markets. What follows are excerpts of that discussion. SE: How would you characterize the NAND market thus far in 2021? Handy: All chips are seeing unusual strength in 2021, but NAND flash and DRAM are doing what they usually do by exhibiting more e... » read more

Chip Package Co-design and Physical Verification for Heterogeneous Integration


Abstract: "Physical verification of components in 2.5D and 3D integrated chips is challenging because existing tool flows have evolved from monolithic silicon design. These components are typically designed on separate technology nodes nearly independent of each other and integrated along the design cycle. We developed an integration and verification methodology with a physical design driven... » read more

Blog Review: Nov. 10


Cadence's Paul McLellan listens in as Malcolm Penn of Future Horizons explains key reasons behind the cyclical nature of the semiconductor industry and how the root of the current chip shortage problems goes back to before the pandemic. Siemens EDA's Ray Salemi continues investigating using Python for verification with a look at some UVM utilities and how they would be used in Python. Syn... » read more

More Errors, More Correction in Memories


As memory bit cells of any type become smaller, bit error rates increase due to lower margins and process variation. This can be dealt with using error correction to account for and correct bit errors, but as more sophisticated error-correction codes (ECC) are used, it requires more silicon area, which in turn drives up the cost. Given this trend, the looming question is whether the cost of ... » read more

Manufacturing Bits: Nov. 2


IRDS lithography roadmap The Journal of Micro/Nanopatterning, Materials, and Metrology (JM3) has published a paper that outlines the lithography roadmap and the various challenges for the next 15 years. The paper, called the "International Roadmap for Devices and Systems lithography roadmap," projects that extreme ultraviolet (EUV) lithography and a next-generation version will remain the m... » read more

Reviving The IPO Route For IP Companies


K. Charles Janac, chairman and CEO of Arteris IP, sat down with Semiconductor Engineering to talk about the company's recent decision to go public, including the benefits and risks of operating as a public IP company. SE: The rule of thumb used to be $20 million in revenue was needed for an IP company to do an IPO at the turn of the Millennium, and then it increased to $40 million about a de... » read more

Partitioning For Better Performance And Power


Partitioning is becoming more critical and much more complex as design teams balance different ways to optimize performance and power, shifting their focus from a single chip to a package or system involving multiple chips with very specific tasks. Approaches to design partitioning have changed over the years, most recently because processor clock speeds have hit a wall while the amount of d... » read more

Manufacturing Bits: Oct. 26


GaN finFETs, scaling GaN At the upcoming IEEE International Electron Devices Meeting (IEDM) in San Francisco, a slew of entities will present papers on the latest technologies in R&D. The event, to be held Dec. 11–15, involve papers on advanced packaging, CMOS image sensors, interconnects, transistors, power devices and other technologies. At IEDM, Intel will present a paper on a GaN-... » read more

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