tag: MRAM

Darker Silicon
By Katherine Derbyshire - 29 Jan, 2015 - Comments: 0

For the last several decades, integrated circuit manufacturers have focused their efforts on [getkc id="74" comment="Moore's Law"], increasing transistor density at constant cost. For much of that time, Dennard’s Law also held: As the dimensions of a device go down, so does power consumption. Smaller transistors ran faster, used less power, and cost less. As most readers already know, howe... » read more

What Will Change In Design For 2015?
By Brian Bailey - 15 Jan, 2015 - Comments: 0

This year more than 26 people provided predictions for 2015. Most of these came from the EDA industry, so the results may be rather biased. However, ecosystems are coming closer together in many parts of the semiconductor food chain, meaning that the EDA companies often can see what is happening in dependent industries and in the system design houses. Thus their predictions may have already res... » read more

Big Memory Shift Ahead
By Brian Bailey - 22 May, 2014 - Comments: 1

System architecture has been driven by the performance of [getkc id="22" kc_name="memory"]. Processor designers would have liked all of the memory be fast [getkc id="92" kc_name="SRAM"], placed on-chip for maximum performance, but that was not an option. Memory had to be fabricated as separate chips and connected via a Printed Circuit Board (PCB). That limited the number of available I/O ports ... » read more

Plugging Information Leaks
By Kenji Tsuda - 21 Apr, 2014 - Comments: 0

A former SanDisk employee was arrested on suspicion of leaking proprietary information about Toshiba’s semiconductor memory to SK Hynix. What makes this particularly interesting is SanDisk is one of Toshiba’s current business partners. The two companies have a joint venture in NAND flash, which competes with South Korea’s SK Hynix. Nihon Keizai Shimbun broke the story last month. Sugi... » read more

Manufacturing Bits: Jan. 28
By Mark LaPedus - 28 Jan, 2014 - Comments: 0

Spintronics gains traction The field of spintronics is gaining interest. The technology could enable a new class of spin-based devices, which combine the switching speeds of logic and the non-volatility of memory. Controlling the magnetism by means of electric fields is the key for future devices, but the ability to switch ferromagnetism technology at room temperature is challenging. Helmho... » read more

What’s After 3D NAND?
By Mark LaPedus - 19 Sep, 2013 - Comments: 0

By Mark LaPedus Planar NAND flash memory is on its last scaling legs, with 3D NAND set to become the successor to the ubiquitous 2D technology. Samsung Electronics, for one, already has begun shipping the industry’s first 3D NAND device, a 24-level, 128-gigabit chip. In addition, Micron and SK Hynix shortly will ship their respective 3D NAND devices. But the Toshiba-SanDisk duo are the lo... » read more

MRAM Begins To Attract Attention
By Mark LaPedus - 19 Sep, 2013 - Comments: 0

By Mark LaPedus In the 1980s, there were two separate innovations that changed the landscape in a pair of related fields—nonvolatile memory and storage. In one effort, Toshiba invented the flash memory, thereby leading to NAND and NOR devices. On another front, physicists discovered the giant magnetoresistance (GMR) effect, a technology that forms the basis of hard disk drives, magnetores... » read more

Universal Memories Fall Back To Earth
By Ed Sperling - 20 Sep, 2012 - Comments: 0

By Mark LaPedus Ten years ago, Intel Corp. declared that flash memory would stop scaling at 65nm, prompting the need for a new replacement technology. Thinking the end was near for flash, a number of companies began to develop various next-generation memory types, such as 3D chips, FeRAM, MRAM, phase-change memory (PCM), and ReRAM. Many of these technologies were originally billed as “uni... » read more

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