Metrology Of Thin Resist For High NA EUVL

By Nova - 16 Nov, 2022 - Comments: 0

One of the many constrains of high numerical aperture extreme ultraviolet lithography (High NA EUVL) is related to resist thickness. In fact, one of the consequences of moving from current 0.33NA to 0.55NA (high NA) is the depth of focus (DOF) reduction. In addition, as the resist feature lines shrink down to 8nm half pitch, it is essential to limit the aspect ratio to avoid pattern collapse. T... » read more

Pushing the limits of EUV mask repair: addressing sub-10 nm defects with the next generation e-beam-based mask repair tool

By Technical Paper Link - 07 Dec, 2021 - Comments: 0

Abstract "Mask repair is an essential step in the manufacturing process of extreme ultraviolet (EUV) masks. Its key challenge is to continuously improve resolution and control to enable the repair of the ever-shrinking feature sizes on mask along the EUV roadmap. The state-of-the-art mask repair method is gas-assisted electron-beam (e-beam) lithography also referred to as focused electron-beam... » read more

A Renaissance For Semiconductors

By Brian Bailey - 29 Oct, 2020 - Comments: 2

Major shifts in semiconductors and end markets are driving what some are calling a renaissance in technology, but navigating this new, multi-faceted set of requirements may cause some structural changes for the chip industry as it becomes more difficult for a single company to do everything. For the past decade, the mobile phone industry has been the dominant driver for the semiconductor eco... » read more

More EUV Mask Gaps

By Mark LaPedus - 17 Nov, 2016 - Comments: 12

Extreme ultraviolet (EUV) lithography is at a critical juncture. After several delays and glitches, [gettech id="31045" comment="EUV"] is now targeted for 7nm and/or 5nm. But there are still a number of technologies that must come together before EUV is inserted into mass production. And if the pieces don’t fall into place, EUV could slip again. First, the EUV source must generate more ... » read more

The Week In Review: Manufacturing

By Mark LaPedus - 04 Nov, 2016 - Comments: 0

Samsung Austin Semiconductor plans to invest more than $1 billion in its fab in Austin, Texas. Today, the fab continues to ramp up the company’s 14nm finFET technology. At the same time, Samsung is expanding its advanced finFET foundry process technology offerings with its fourth-generation 14nm process (14LPU) and its third-generation 10nm technology (10LPU). Graphcore is developing a so-... » read more

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Metrology Of Thin Resist For High NA EUVL

Pushing the limits of EUV mask repair: addressing sub-10 nm defects with the next generation e-beam-based mask repair tool

A Renaissance For Semiconductors

More EUV Mask Gaps

The Week In Review: Manufacturing