tag: dielectrics

Powering CFETs From The Backside
By Katherine Derbyshire - 21 Mar, 2024 - Comments: 0

The first CMOS circuits to incorporate backside power connections are likely to be based on stacked nanosheet transistors, but further down the road, planners envision complementary transistors (CFETs) that vertically integrate stacked NFET and PFET devices. With at least twice the thickness of a nanosheet transistor, connecting CFETs to each other and to the rest of the circuit is likely to... » read more

Design Considerations For Ultra-High Current Power Delivery Networks
By Quaid Joher Furniturewala - 11 Jul, 2023 - Comments: 0

This article is adapted from a presentation at TestConX, March 5-8, 2023, Mesa, AZ. A power-delivery network (PDN), also called a power-distribution network, is a localized network that delivers power from voltage-regulator modules (VRMs) throughout a load board to the package’s chip pads or wafer’s die pads. The PDN includes the VRM itself, all bulk and localized capacitance, board vi... » read more

2D Semiconductor Materials Creep Toward Manufacturing
By Katherine Derbyshire - 16 Feb, 2023 - Comments: 0

As transistors scale down, they need thinner channels to achieve adequate channel control. In silicon, though, surface roughness scattering degrades mobility, limiting the ultimate channel thickness to about 3nm. Two-dimensional transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are attractive in part because they avoid this limitation. With no out-of-plane dangling bonds and at... » read more

Review of essential use of fluorochemicals in lithographic patterning and semiconductor processing
By Technical Paper Link - 06 Apr, 2022 - Comments: 0

New academic paper by researchers from Cornell University.   Abstract "We identify and describe categories of fluorochemicals used to produce advanced semiconductors within the lithographic patterning manufacturing processes. Topics discussed include the per- and polyfluoroalkyl substance (PFAS) materials used and their necessary attributes for successful semiconductor manufacturing... » read more

Next-Gen Transistors
By Ed Sperling - 07 Mar, 2022 - Comments: 0

Nanosheets, or more generally, gate-all-around FETs, mark the next big shift in transistor structures at the most advanced nodes. David Fried, vice president of computational products at Lam Research, talks with Semiconductor Engineering about the advantages of using these new transistor types, along with myriad challenges at future nodes, particularly in the area of metrology. » read more

More Data, More Memory-Scaling Problems
By Bryon Moyer - 14 Jan, 2021 - Comments: 0

Memories of all types are facing pressures as demands grow for greater capacity, lower cost, faster speeds, and lower power to handle the onslaught of new data being generated daily. Whether it's well-established memory types or novel approaches, continued work is required to keep scaling moving forward as our need for memory grows at an accelerating pace. “Data is the new economy of this ... » read more

Variation Threat In Advanced Nodes, Packages Grows
By Ed Sperling - 21 Dec, 2020 - Comments: 0

Variation is becoming a much bigger and more complex problem for chipmakers as they push to the next process nodes or into increasingly dense advanced packages, raising concerns about the functionality and reliability of individual devices, and even entire systems. In the past, almost all concerns about variation focused on the manufacturing process. What printed on a piece of silicon didn't... » read more

Power Budgets At 3nm And Beyond
By Ed Sperling - 14 Mar, 2019 - Comments: 0

There is high confidence that digital logic will continue to shrink at least to 3nm, and possibly down to 1.5nm. Each of those will require significant changes in how design teams approach power. This is somewhat evolutionary for most chipmakers. Five years ago there were fewer than a handful of power experts in most large organizations. Today, everyone deals with power in one way or another... » read more

Tech Talk: 5/3nm Parasitics
By Ed Sperling - 22 Feb, 2018 - Comments: 0

Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs. https://youtu.be/24C6byQBkuI » read more

New Nodes, Materials, Memories
By Ed Sperling - 15 Feb, 2018 - Comments: 0

Ellie Yieh, vice president and general manager of Advanced Product Technology Development at [getentity id="22817" e_name="Applied Materials"], and head of the company's Maydan Technology Center, sat down with Semiconductor Engineering to talk about challenges, changes and solutions at advanced nodes and with new applications. What follows are excerpts of that conversation. SE: How far can w... » read more

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