tag: ETH Zurich

Chip Industry Week In Review
By The SE Staff - 19 Jan, 2024 - Comments: 0

By Jesse Allen, Gregory Haley, and Liz Allan Synopsys will acquire Ansys for about $35 billion in cash and stock. The deal will boost Synopsys' multi-physics simulation capabilities, which are essential for complex 3D-IC designs, where thermal density can have significant repercussions. The acquisition is expected to be finalized in the first half of 2025. Worldwide semiconductor revenue ... » read more

Novel Neuromorphic Artificial Neural Network Circuit Architecture
By Technical Paper Link - 15 Jan, 2024 - Comments: 0

A technical paper titled “Mosaic: in-memory computing and routing for small-world spike-based neuromorphic systems” was published by researchers at CEA-LETI Université Grenoble Alpes, University of Zurich and ETH Zurich. Abstract: "The brain’s connectivity is locally dense and globally sparse, forming a small-world graph—a principle prevalent in the evolution of various species, sugg... » read more

Chip Industry Week In Review
By The SE Staff - 08 Dec, 2023 - Comments: 0

By Jesse Allen, Karen Heyman, and Liz Allan AMD took the covers off new AI accelerators for training and inferencing of large language model and high-performance computing workloads. In its announcement, AMD focused heavily on performance leadership in the commercial AI processor space through a combination of architectural changes, better software efficiency, along with some improvements in... » read more

Chip Industry’s Technical Paper Roundup: Dec 5
By Linda Christensen - 05 Dec, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=171 /] More ReadingTechnical Paper Library home » read more

Alleviating the DRAM Capacity Bottleneck in Consumer Devices with NVMs
By Technical Paper Link - 30 Nov, 2023 - Comments: 0

A new technical paper titled "Extending Memory Capacity in Modern Consumer Systems With Emerging Non-Volatile Memory: Experimental Analysis and Characterization Using the Intel Optane SSD" was published by researchers at ETH Zurich, University of Illinois Urbana-Champaign, Google, and Rivos. Abstract Excerpt "DRAM scalability is becoming a limiting factor to the available memory capacity in... » read more

Technical Paper Roundup: November 28
By Linda Christensen - 28 Nov, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=169 /] More Reading Technical Paper Library home » read more

A Fast And Unified Toolchain For Rapid Design Space Exploration Of Chiplet Architectures
By Technical Paper Link - 27 Nov, 2023 - Comments: 0

A technical paper titled “RapidChiplet: A Toolchain for Rapid Design Space Exploration of Chiplet Architectures” was published by researchers at ETH Zurich and University of Bologna. Abstract: "Chiplet architectures are a promising paradigm to overcome the scaling challenges of monolithic chips. Chiplets offer heterogeneity, modularity, and cost-effectiveness. The design space of chiplet ... » read more

Fast Interrupt Extension For MCU RISC-V
By Technical Paper Link - 20 Nov, 2023 - Comments: 0

A technical paper titled “CV32RT: Enabling Fast Interrupt and Context Switching for RISC-V Microcontrollers” was published by researchers at ETH Zurich and University of Bologna. Abstract: "Processors using the open RISC-V ISA are finding increasing adoption in the embedded world. Many embedded use cases have real-time constraints and require flexible, predictable, and fast reactive handl... » read more

Chip Industry’s Technical Paper Roundup: November 6
By Liz Allan - 06 Nov, 2023 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=162 /] More Reading Technical Paper Library home » read more

A Modelling Approach To Well-Known And Exotic 2D Materials For Next-Gen FETs
By Technical Paper Link - 31 Oct, 2023 - Comments: 0

A technical paper titled “Field-Effect Transistors based on 2-D Materials: a Modeling Perspective” was published by researchers at ETH Zurich. Abstract: "Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity... » read more

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