tag: EUV

Fallout From Scaling
By Ed Sperling - 03 Feb, 2016 - Comments: 0

By Ed Sperling & Ann Steffora Mutschler Semiconductor scaling is becoming much more difficult and expensive at each new node, creating sharp divisions about what path to take next for which markets and applications. What used to be confined to one or two clear choices is now turning into a menu of items and possibilities, often with no clear guarantees for a successful outcome. Views ... » read more

5nm Fab Challenges
By Mark LaPedus - 21 Jan, 2016 - Comments: 2

At a recent event, Intel presented a paper that generated sparks and fueled speculation regarding the future direction of the leading-edge IC industry. The company described a next-generation transistor called the nanowire FET, which is a finFET turned on its side with a gate wrapped around it. Intel’s nanowire FET, sometimes called a gate-all-around FET, is said to meet the device require... » read more

Coming To A Fab Near You?
By Katherine Derbyshire - 21 Jan, 2016 - Comments: 1

What do Quentin Tarantino and ASML have in common? Anamorphic lenses. The optical image created by an anamorphic lens is oval, rather than round, with different magnifications along the horizontal and vertical axes. Tarantino used 65mm anamorphic lenses to film The Hateful Eight, and some theaters are also using them to screen the movie. It’s the first fiction feature to use this format s... » read more

Tech Talk: Double-Triple Patterning
By Brian Bailey - 21 Jan, 2016 - Comments: 0

Mentor Graphics' David Abercrombie shows the differences and challenges in double patterning versus triple patterning. [youtube vid= e0wZmjBbEf0] » read more

Will 5nm Happen?
By Mark LaPedus - 20 Jan, 2016 - Comments: 7

Chipmakers are ramping up their 16/14nm finFET processes, with 10nm finFETs expected to ship sometime in late 2016 or early 2017. So what’s next? The foundries can see a path to extend the finFET transistor to 7nm, but the next node, 5nm, is far from certain and may never happen. Indeed, there are several technical and economic challenges at 5nm. And even if 5nm happens, only a few compani... » read more

Reflections On 2015
By Brian Bailey - 22 Dec, 2015 - Comments: 0

It is easy to make predictions, but few people can make them with any degree of accuracy. Most of the time, those predictions are forgotten by the end of the year and there is no one to do a tally of who holds more credibility for next year. Not so with SemiEngineering. We like to hold people's feet to the fire, but while the Pants-On-Fire meter may be applicable to politicians, we like to thin... » read more

Inside Inspection And Metrology
By Mark LaPedus - 18 Dec, 2015 - Comments: 0

Semiconductor Engineering sat down to talk about inspection, metrology and other issues with Mehdi Vaez-Iravani, vice president of advanced imaging technologies at Applied Materials. What follows are excerpts of that conversation. SE: Today, the industry is working on a new range of complex architectures, such as 3D NAND and finFETs. For these technologies, the industry is clearly struggling... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 18 Dec, 2015 - Comments: 1

Samsung plans to make a major entry into the drone market, according to reports. “Samsung is not alone in focusing on the drone market,” said Will Strauss, president of Forward Concepts, in a research note. “At CES next month in Las Vegas, one can expect new products from drone market leader DJI, but dozens of new drone models from Parrot and many other companies. Even GoPro chip maker A... » read more

Foundries Face Challenges in 2016
By Mark LaPedus - 17 Dec, 2015 - Comments: 2

Generally, 2015 has been a challenging year in the foundry business. For one thing, the foundry industry will register modest growth in 2015. In addition, the foundry customer base is consolidating. And on the leading edge, foundries took longer than expected to ramp up their 16nm/14nm finFET processes. So, after an eventful year in 2015, what’s in store for the foundry business in 2016? I... » read more

The Next Resists…Continued
By Katherine Derbyshire - 17 Dec, 2015 - Comments: 1

As previously discussed, conventional chemically-amplified resists are struggling to balance the competing requirements of EUV lithography. Simultaneously meeting the industry’s targets for resolution, sensitivity, and line-edge roughness may require new resist concepts. Inpria’s resist technology, based on tin-oxide nano clusters, is one possibility. Recently published work at SUNY Albany ... » read more

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