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Ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing


Source: AIP Applied Physics Letters, published 2/4/2021.  Evelyn T. Breyer1,  Halid Mulaosmanovic1,  Thomas Mikolajick1,2, and  Stefan Slesazeck1 1Nanoelectronic Materials Laboratory (NaMLab) gGmbH, 01187 Dresden, Germany 2Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany   Technical paper link is here » read more

Tapping Into Non-Volatile Logic


Research is underway to develop a new type of logic device, called non-volatile logic (NVL), based on ferroelectric FETs. FeFETs have been a topic of high interest at recent industry conferences, but the overwhelming focus has been using them in memory arrays. The memory bit cell, however, is simply a transistor that can store a state. That can be leveraged in other applications. “Non-v... » read more

FeFETs Bring Promise And Challenges


Ferroelectric FETs (FeFETs) and memory (FeRAM) are generating high levels of interest in the research community. Based on a physical mechanism that hasn’t yet been commercially exploited, they join the other interesting new physics ideas that are in various stages of commercialization. “FeRAM is very promising, but it's like all promising memory technologies — it takes a while to get b... » read more

Cerfe Labs: Spin-On Memory


Arm has spun off one of its more intriguing semiconductor research projects, a new non-volatile memory type called correlated electron materials RAM (CeRAM) that holds the potential to substantially reduce the cost of memory in everything from edge devices to high-performance computing. Headed by two former Arm Research insiders — Eric Hennenhoefer, who will serve as CEO and Greg Yeric, wh... » read more

Scaling Up Compute-In-Memory Accelerators


Researchers are zeroing in on new architectures to boost performance by limiting the movement of data in a device, but this is proving to be much harder than it appears. The argument for memory-based computation is familiar by now. Many important computational workloads involve repetitive operations on large datasets. Moving data from memory to the processing unit and back — the so-called ... » read more

Manufacturing Bits: April 23


Sorting nuclei CERN and GSI Darmstadt have begun testing the first of two giant magnets that will serve as part of one of the largest and most complex accelerator facilities in the world. CERN, the European Organization for Nuclear Research, recently obtained two magnets from GSI. The two magnets weigh a total of 27 tons. About 60 more magnets will follow over the next five years. These ... » read more

In-Memory Vs. Near-Memory Computing


New memory-centric chip technologies are emerging that promise to solve the bandwidth bottleneck issues in today’s systems. The idea behind these technologies is to bring the memory closer to the processing tasks to speed up the system. This concept isn’t new and the previous versions of the technology fell short. Moreover, it’s unclear if the new approaches will live up to their billi... » read more

What Are FeFETs?


The memory market is going in several different directions at once. On one front, the traditional memory types, such DRAM and flash, remain the workhorse technologies in systems despite undergoing some changes in the business. Then, several vendors are readying the next-generation memory types in the market. As part of an ongoing series, Semiconductor Engineering will explore where the new a... » read more