tag: finFET

ESD Co-Design For High-Speed SerDeS In FinFET Technologies
By Synopsys - 07 Jun, 2023 - Comments: 0

An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, including the phase from the completion of the silicon wafer processing to when the device (die) is assembled in the system. To avoid yield loss due to ESD damage during this early phase, on-chip ESD protection measures are applied to provide a certain degree of ESD robustness. The componen... » read more

The History Of CMOS
By Paul McLellan - 25 May, 2023 - Comments: 0

Since CMOS has been around for about 50 years, a comprehensive history would be a book. This blog focuses on what I consider the major transitions. NMOS Before CMOS, there was NMOS (also PMOS, but I have no direct experience with that). An NMOS gate consisted of a network of N-transistors between the output and Vss, and a resistor (actually a transistor with an implant) between the output and... » read more

The Impact Of Metal Gate Recess Profile On Transistor Resistance And Capacitance
By Pradeep Nanja - 18 May, 2023 - Comments: 0

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize the metal gate recess dimensions. However, there are limits to reducing this capacitance if you simply remove more of the metal material, since this can modify capacitance unexpectedly through chan... » read more

A Deposition And Etch Technique To Lower Resistance Of Semiconductor Metal Lines
By Timothy Yang - 20 Apr, 2023 - Comments: 0

Copper's resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) wires is traditionally done by etching a trench pattern in low-k silicon dioxide using a trench etch process, and subsequently filling the trench with Cu via a damascene flow. Unfortunately, this meth... » read more

IEDM: TSMC N3 Details
By Paul McLellan - 26 Jan, 2023 - Comments: 0

I attended IEDM in San Francisco in December. There were two presentations about TSMC's N3 process. This is actually a bit of a misnomer since TSMC has two N3 processes, one simply called N3. The other (the second generation) is called N3E. The two papers were: Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond A 3nm CMOS FinFl... » read more

Automatic Layout Generator Targeting Region-based Layouts for Advanced FinFET-Based Full-Custom Circuits (UT Austin/NVIDIA)
By Technical Paper Link - 15 Dec, 2022 - Comments: 0

A technical paper titled "AutoCRAFT: Layout Automation for Custom Circuits in Advanced FinFET Technologies" was published by researchers at UT Austin and NVIDIA. "This paper presents AutoCRAFT, an automatic layout generator targeting region-based layouts for advanced FinFET-based full-custom circuits. AutoCRAFT uses specialized place-and-route (P&R) algorithms to handle various design cons... » read more

Novel Multi-Independent Gate-Controlled FinFET Technology
By Technical Paper Link - 08 Nov, 2022 - Comments: 0

A new technical paper titled "Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)" was published by researchers at Changzhou University. Abstract: "This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific device... » read more

L-FinFET Neuron For A Highly Scalable Capacitive Neural Network (KAIST)
By Technical Paper Link - 31 Oct, 2022 - Comments: 0

A new technical paper titled "An Artificial Neuron with a Leaky Fin-Shaped Field-Effect Transistor for a Highly Scalable Capacitive Neural Network" was published by researchers at KAIST (Korea Advanced Institute of Science and Technology). “In commercialized flash memory, tunnelling oxide prevents the trapped charges from escaping for better memory ability. In our proposed FinFET neuron, t... » read more

Cryogenic CMOS Becomes Cool
By Brian Bailey - 11 Aug, 2022 - Comments: 1

Cryogenic CMOS is a technology on the cusp, promising higher performance and lower power with no change in fabrication technology. The question now is whether it becomes viable and mainstream. Technologies often appear to be just on the horizon, not quite making it, but never too far out of sight. That's usually because some issue plagues it, and the incentive is not big enough to solve the ... » read more

Chipmaking In The Third Dimension
By Krishnan Shrinivasan - 16 Jun, 2022 - Comments: 0

Every few months, new and improved electronics are introduced. They’re typically smaller, smarter, faster, have more bandwidth, are more power-efficient, etc. — all thanks to a new generation of advanced chips and processors. Our digital society has come to expect this steady drip of new devices as sure as the sun will rise tomorrow. Behind the scenes, however, engineers are working feve... » read more

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