Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. PMID: 34203194; PMCID: PMC8307669.
Find technical paper here.
Abstract
"In this paper, to solve the epitaxial thickness limit and the high in...
» read more