Microarchitecture Design For Low Power


As designs move to finFET process nodes, dynamic power reduction has become a requirement. Designers have to eliminate or minimize all sources of redundant switching activity in order to reduce dynamic power in the design. In our last blog, we looked at dynamic power wastage due to redundant adders and multipliers and how to gate these operators to save power. We also mentioned a couple of m... » read more

Blog Review: April 22


DARPA thinks machine-brain interfaces are poised to become an industry-changing technology. Rambus' David G. Stork brings us emerging developments in the field from the Neural Engineering Boot Camp. If you live in an area that doesn't get quite enough sun for solar panels, how about a smart window that harvests energy from wind and rain? In this week's top five picks, Ansys' Justin Nescott a... » read more

Searching For 3D Metrology


In the previous decade, chipmakers made a bold but necessary decision to select the [getkc id="185" kc_name="finFET"] as the next transistor architecture for the IC industry. Over time, though, chipmakers discovered that the finFET would present some challenges in the fab. Deposition, etch and lithography were the obvious hurdles, but chipmakers also saw a big gap in metrology. In fact,... » read more

Low Power Paradox


Power has been an important design challenge for quite some time. Leakage power started to grow in 90nm, and by 65nm it became a severe design issue. We have built many techniques to address leakage, most notably power gating. These techniques are complex and have an impact on the design as a whole. FinFET technologies are seen as a boon to this issue of leakage. There are references that qu... » read more

Manufacturing Bits: Feb. 24


EUV progress report At the SPIE Advanced Lithography conference in San Jose, Calif., ASML Holding said that one customer, Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC), has exposed more than 1,000 wafers on an NXE:3300B EUV system in a single day. This is one step towards the insertion of EUV lithography in volume production. During a recent test run on the system, TSMC exposed 1,022 w... » read more

The Week In Review: Manufacturing


First Solar announced that Apple has committed $848 million for clean energy from First Solar’s California Flats Solar Project in Monterey County, Calif. Apple will receive electricity from 130 megawatts (MW) AC of the solar project under a 25-year power purchase agreement (PPA), the largest agreement in the industry to provide clean energy to a commercial end user. Applied Materials repor... » read more

The Week In Review: Manufacturing


This week, IBM began to cut jobs amid lackluster results. Big Blue is also in the process of selling its chip unit to GlobalFoundries. GlobalFoundries said the jobs are safe at IBM Micro, at least for now, according to a report the Press and Sun-Bulletin. What’s the latest with Applied Materials’ proposed acquisition with Tokyo Electron Ltd. (TEL)? “Germany, Israel and Singapore approv... » read more

Unraveling The Mysteries At IEDM


In some respects, the 2014 IEEE International Electron Devices Meeting (IEDM) was no different than past events. The event, held this week in San Francisco, included the usual and dizzying array of tutorials, sessions, papers and panels. On the leading-edge CMOS front, for example, the topics included [getkc id="82" kc_name="2.5D"]/[getkc id="42" kc_name="3D IC"] chips, III-V materials, [getkc ... » read more

And the Winner is…


Semiconductor Engineering now has its first full year under its belt, and I have to say it has been an incredible year. Not only did we exceed a million page views in our first year, but we also got started on the Knowledge Center, an endeavor the likes of which has never been attempted in our industry. It is still very young and has a lot of growing up to do, but it is a wonderful start. We wo... » read more

IBM, Intel And TSMC Roll Out finFETs


At the IEEE International Electron Devices Meeting (IEDM) in San Franciso, IBM, Intel and Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) this week will separately present the latest details of their respective 16nm/14nm finFET technologies. As expected, Intel and TSMC will continue to use bulk CMOS. IBM will continue to go with rival silicon-on-insulator (SOI) technology. At IEDM, Intel ... » read more

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