Blog Review: June 11


eSilicon’s Jack Harding says that EDA and semiconductors need to focus heavily on recruiting the next generation of brilliant engineers. This technology is cool, and even better it makes all the other cool technology work. It’s time to remind the rest of the world. Cadence’s Brian Fuller distills a panel discussion at DAC on computer vision—the sensors that enable driverless cars, a... » read more

Executive Insight: Aart de Geus


SE: What worries you most? De Geus: Everything I do is with high intensity, and what is of super high intensity right now—and there are challenges and opportunities in it—is that we have the confluence of some very big changes right now happening at the same time. On the technology side, there are multiple intersections. One is the intersection of another 10 years of Moore’s Law—finF... » read more

Big Memory Shift Ahead


System architecture has been driven by the performance of [getkc id="22" kc_name="memory"]. Processor designers would have liked all of the memory be fast [getkc id="92" kc_name="SRAM"], placed on-chip for maximum performance, but that was not an option. Memory had to be fabricated as separate chips and connected via a Printed Circuit Board (PCB). That limited the number of available I/O ports ... » read more

FinFET And Multi-Patterning Aware Place And Route Implementation


The use of finFETs and multi-patterning has a huge impact on the entire physical implementation flow. This paper outlines the new challenges in placement, routing, optimization, and physical verification and describes how the Olympus-SoC place and route system handles them. To view this white paper, click here. » read more

Shootout At 28nm


By Ed Sperling & Mark LaPedus Samsung, Soitec and STMicroelectronics are joining forces on 28nm FD-SOI, creating a showdown with TSMC and others over the best single-patterned processes and materials and raising questions about how quickly companies need to move to the finFET technology generation. The multi-source manufacturing collaboration agreement for fully depleted silicon-on-insulato... » read more

Atomic Layer Etch Finally Emerges


The migration towards finFETs and other devices at the 20nm node and beyond will require a new array of chip-manufacturing technologies. Multiple patterning, hybrid metrology and newfangled interconnect schemes are just a few of the technologies required for future scaling. In addition, the industry also will require new techniques that can process structures at the atomic level. For example... » read more

How Much Testing Is Enough?


As chipmakers move towards finer geometries, IC designs are obviously becoming more complex and expensive. Given the enormous risks involved, chipmakers must ensure the quality of the parts before they go out the door. And as part of quality assurance process, that requires a sound test strategy. But for years, IC makers have faced the same dilemma. On one hand, they want a stringent test me... » read more

The Bumpy Road To FinFETs


The shift from planar transistors to finFETs is a major inflection point in the IC industry. FinFETs are expected to enable higher performance chips at lower voltages. And the next-generation transistor technology also could allow the industry to extend CMOS to the 10nm node and perhaps beyond. But as it turns out, finFET technology is also harder to master than previously thought. For exam... » read more

What’s Wrong With Power Signoff


Power signoff used to be a checklist item before a design went to tapeout. But as power has become a critical factor in designs, particularly at advanced nodes, signing off on power now needs to be done at multiple points throughout the design flow. That alone adds even greater complexity to already complex design processes because it requires fixed reference points and scenarios for taking mea... » read more

FinFET Learning


FinFETs are not simple to work with. They’re difficult to manufacture, tricky to design, and they run the risk of greatly increased dynamic power density—particularly at 14/16nm, where extra margin is hard to justify—which affects everything from electromigration to signal integrity. Moreover, while finFETs have been on the drawing board for more than a decade, it’s taken four years ... » read more

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