Meeting High-Frequency And Power Density Challenges With Flip Chip MLF Packaging


The relentless march of semiconductor scaling continues to reshape the packaging landscape, driven by Moore’s Law and the demand for higher performance in increasingly compact form factors [1]. Over the past two decades transistor density has increased exponentially, with leading-edge processes now achieving densities exceeding 100 million transistors per square millimeter. Certain applica... » read more

Unlocking Next-Gen Thermal Management: Why Indium-Based Metal TIMs Are Game-Changers


As electronic devices become more powerful and compact, thermal management has become one of the most critical challenges in advanced electronic packaging. High-performance processors used in AI computing, data centers, and 5G/6G infrastructure generate significant heat, and failure to dissipate effectively can lead to reduced performance, reliability issues, and even catastrophic component fai... » read more

LAB Flip Chip Reflow Process Robustness Prediction By Thermal Simulation


By Gabriel Chang and Ricky Zang Nowadays, there are many interconnects in IC chips. One of the packaging goals is to connect an IC to the next level of subsystem circuitry (package substrates/print circuit boards). Mass reflow (MR) of solder joints is a widely adapted and stable process in the industry. The applications of MR include flip chip, ball mounting, surface mount technology (SMT), ... » read more

Reverse Laser Assisted Bonding (R-LAB) Technology For Chiplet Module Bonding On Substrate


By SeokHo Na, MinHo Gim, GaHyeon Kim, DongSu Ryu, DongJoo Park, and JinYoung Kim In the recent semiconductor market, there are many applications including smartphone, tablets, central processing units (CPUs), artificial intelligence (AI), data cloud and more that are expecting and experiencing rapid growth. As most of these applications require high performance, single-die Flip Chip packages... » read more

A Flip-Chip, Co-Packaged With Photodiode, High-speed TIA in 16nm FinFET CMOS


A technical paper titled "A 112-Gb/s —8.2-dBm Sensitivity 4-PAM Linear TIA in 16-nm CMOS With Co-Packaged Photodiodes" was published by researchers at University of Toronto, Alphawave IP, and Huawei Technologies Canada. Abstract: "A flip-chip co-packaged linear transimpedance amplifier (TIA) in 16-nm fin field effect transistor (FinFET) CMOS demonstrating 112-Gb/s four-level pulse-amplitude... » read more

Challenges Grow For Creating Smaller Bumps For Flip Chips


New bump structures are being developed to enable higher interconnect densities in flip-chip packaging, but they are complex, expensive, and increasingly difficult to manufacture. For products with high pin counts, flip-chip [1] packages have long been a popular choice because they utilize the whole die area for interconnect. The technology has been in use since the 1970s, starting with IBMâ... » read more

Next Gen Laser Assisted Bonding (LAB) Technology


In the semiconductor market, there are many applications including smartphone, tablets, central processing units (CPUs), artificial intelligence (AI), data cloud and more that are expecting rapid growth. Among them, CPU data processing, AI and data cloud require much higher power consumption than smart phones or tablets. For the higher power applications, Flip Chip ball grid array (FCBGA) or 2.... » read more

Bump Co-Planarity And Inconsistencies Cause Yield, Reliability Issues


Bumps are a key component in many advanced packages, but at nanoscale levels making sure all those bumps have a consistent height is an increasing challenge. Without co-planarity, surfaces may not properly adhere. That can reduce yield if the problem is not identified in packaging, or it can cause reliability problems in the field. Identifying those issues requires a variety of process steps... » read more

Fan-Out Packaging Gets Competitive


Fan-out wafer-level packaging (FOWLP) is a key enabler in the industry shift from transistor scaling to system scaling and integration. The design fans out the chip interconnects through a redistribution layer instead of a substrate. Compared to flip-chip ball grid array (FCBGA) or wire bonds, it creates lower thermal resistance, a slimmer package, and potentially lower costs. Yet, if the h... » read more

Flip-Chip Integration of a GaSb Semiconductor Optical Amplifier with a Silicon Photonic Circuit


New research paper titled "Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides" by researchers at Tampere University (Finland). Abstract: "The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functional... » read more

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