tag: gallium nitride

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications
By Technical Paper Link - 04 Feb, 2022 - Comments: 0

Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

Inspecting And Testing GaN Power Semis
By Patrick Waurzyniak - 11 Jan, 2022 - Comments: 1

As demand for new automotive battery electric vehicles (BEVs) heats up, automakers are looking for solutions to meet strict zero-defect goals in power semiconductors. Gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap power semiconductors offer automakers a range of new EV solutions, but questions remain on how to meet the stringent quality goals of the automotive industry. Among t... » read more

GaN Application Base Widens, Adoption Grows
By Patrick Waurzyniak - 16 Dec, 2021 - Comments: 0

Gallium nitride (GaN) is beginning to show up across a broad range of power semiconductor applications due to its wide bandgap, enabling fast-charging, very high speeds, and much smaller form factors than silicon-based chips. Unlike silicon carbide (SiC), another wide-bandgap technology, GaN is a lateral rather than a vertical device. GaN tops out at about 900 volts, which limits its use in ... » read more

Revving Up SiC And GaN
By Ann Mutschler - 13 Dec, 2021 - Comments: 0

Silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular for power electronics, particularly in automotive applications, driving down costs as volumes scale up and increasing the demand for better tools to design, verify, and test these wide-bandgap devices. Both SiC and GaN are proving essential in areas such as battery management in electric vehicles. They can handle much ... » read more

Innovative Technology Drives Rapid Deployment Of New 5G Products, Services, And Business Models
By Brendan Farley - 02 Dec, 2021 - Comments: 0

The wireless future is about developing the most compelling products using a combination of advanced technologies to maximize system performance, while optimizing both cost and power. Doing so will unlock deployment of new 5G products and services for mobile operators and the whole 5G ecosystem, from businesses to consumers to the economy. With 5G offering so much potential, how can the industr... » read more

Apple’s First GaN Charger
By Stephen Russell - 18 Nov, 2021 - Comments: 1

It has been heavily rumored and anticipated for a few years now, but we have finally seen Apple make the switch to using gallium nitride (GaN) as the power transistor in one of their charging products: the 140 W charger for the new 16-inch MacBook Pro. As has been the case with many innovations in the past, Apple may not be the first, but when they do adopt a technology people take notice! A... » read more

Power/Performance Bits: Nov. 2
By Jesse Allen - 02 Nov, 2021 - Comments: 0

GaN CMOS ICs Researchers from the Hong Kong University of Science and Technology (HKUST) are working to increase the functionality available to wide bandgap gallium nitride (GaN) electronics. GaN is frequently used in power electronics, such as power converters and supplies. However, GaN CMOS technology has been hampered by the difficulties in implementing p-channel transistors and integrat... » read more

The Silicon Carbide Race Begins
By Patrick Waurzyniak - 20 Sep, 2021 - Comments: 0

The growing adoption of silicon carbide (SiC) for a variety of automotive chips has reached the tipping point where most chipmakers now consider it a relatively safe bet, setting off a scramble to stake a claim and push this wide-bandgap technology into the mainstream. SiC holds great promise for a number of automotive applications, particularly for battery electric vehicles. It can extend d... » read more

Gearing Up For Next-Gen Power Semis
By Mark LaPedus - 16 Sep, 2021 - Comments: 0

After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Gate Drive Solutions For CoolGaN 600 V HEMTs
By Infineon - 08 Jul, 2021 - Comments: 0

This paper explains the gate drive requirements for Infineon’s CoolGaN 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical applicat... » read more

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