tag: GaN

Where Technology Breakthroughs Are Needed
By Mark LaPedus - 23 Dec, 2019 - Comments: 2

After years of delays, extreme ultraviolet (EUV) lithography is finally in production at the 7nm logic node with 5nm in the works. EUV, a next-generation lithography technology, certainly will help chipmakers migrate to the next nodes. But EUV doesn’t solve every problem. Nor does it address all challenges in the semiconductor industry. Not by a long shot. To be sure, the industry needs... » read more

Power/Performance Bits: Dec. 23
By Jesse Allen - 23 Dec, 2019 - Comments: 0

High mobility transistor Engineers at the University of Delaware created a high-electron mobility transistor, a device that amplifies and controls electrical current, using gallium nitride (GaN) with indium aluminum-nitride as the barrier on a silicon substrate. Among devices of its type, the team says their transistor has record-setting properties, including record low gate leakage current... » read more

RF GaN Gains Steam
By Mark LaPedus - 21 Nov, 2019 - Comments: 0

Wide-bandgap semiconductors are hot topics these days. One wide-bandgap semi type--silicon carbide (SiC)--is the talk of the town and is gaining steam in electric vehicles and other systems. But let’s not forget about gallium nitride (GaN). GaN, a binary III-V material, has 10 times the breakdown field strength with double the electron mobility than silicon. GaN is used for LEDs, power ... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 15 Nov, 2019 - Comments: 0

Market research Smartphone shipments in China stood at 98.9 million units in the third quarter of 2019, down 3.6% year-on-year, according to IDC. Of that, 5G phone shipments in China have grown from virtually zero not long ago to 485,000 units in the third quarter of 2019, according to IDC. Vendors shipped devices amid the launch of commercial 5G services in October. The early smartphone le... » read more

SiC Market Moves Into Overdrive
By Mark LaPedus - 19 Sep, 2019 - Comments: 0

The silicon carbide (SiC) power semiconductor market continues to heat up in the automotive arena. In recent times, several automotive OEMs have formed a series of alliances with SiC device makers, and for good reason. In a major way, many automotive OEMs are entering or expanding their efforts in the battery-electric car market. SiC power semiconductors are among the key components used ... » read more

Wolfspeed GaN: Rugged Enough For Tracking Space Junk, Rugged Enough For 5G
By Wolfspeed, a Cree Company - 18 Sep, 2019 - Comments: 0

GaN RF devices are used throughout the world on projects in a broad range of applications such as surveillance and weather radar, first responder communications, and improvised explosive device (IED) protection systems, where downtime is not an option. But are they rugged and reliable enough to tackle the harshest environments the telecom market can hand out, especially as it relates to 5G smal... » read more

Manufacturing Bits: Sept. 3
By Mark LaPedus - 03 Sep, 2019 - Comments: 1

Modeling SiC defects The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). Defectivity is an issue for SiC, a compound semiconductor material based on silicon and carbon. Today, SiC is used to make specialized power semiconductors for high-voltage applications, such as electric ... » read more

GaN Versus Silicon For 5G
By Kevin Fogarty - 15 Aug, 2019 - Comments: 0

The global race to launch 5G mmWave frequencies could provide a long-anticipated market opportunity for gallium nitride (GaN) as an alternative to silicon. GaN is more power-efficient than silicon for 5G RF. In fact, GaN has been the heir apparent to silicon in 5G power amplifiers for years, especially when it comes to mmWave 5G networks. What makes it so attractive is its ability to efficie... » read more

Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
By Wolfspeed, a Cree Company - 14 Aug, 2019 - Comments: 0

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performance of the 28 V and 40 V technologies, with 400 nm and 250 nm gate length, has been characterized with DC accelerated life test (DC-ALT), f... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 19 Jul, 2019 - Comments: 0

Chipmakers TSMC posted mixed results for the second quarter. It also presented a mixed outlook for the third quarter, according to various reports. TSMC and Samsung are in the midst of a foundry battle at 7nm and 5nm. “TSMC raised its 2019 capex outlook to over $11B, up from prior guidance of $10B-$11B. The increased capex is to support 5nm and 7nm ramps, with accelerated 5G investment a... » read more

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