tag: GaN

Power/Performance Bits: Nov. 2
By Jesse Allen - 02 Nov, 2021 - Comments: 0

GaN CMOS ICs Researchers from the Hong Kong University of Science and Technology (HKUST) are working to increase the functionality available to wide bandgap gallium nitride (GaN) electronics. GaN is frequently used in power electronics, such as power converters and supplies. However, GaN CMOS technology has been hampered by the difficulties in implementing p-channel transistors and integrat... » read more

Manufacturing Bits: Oct. 26
By Mark LaPedus - 26 Oct, 2021 - Comments: 0

GaN finFETs, scaling GaN At the upcoming IEEE International Electron Devices Meeting (IEDM) in San Francisco, a slew of entities will present papers on the latest technologies in R&D. The event, to be held Dec. 11–15, involve papers on advanced packaging, CMOS image sensors, interconnects, transistors, power devices and other technologies. At IEDM, Intel will present a paper on a GaN-... » read more

Inspecting, Testing, And Measuring SiC
By Patrick Waurzyniak - 12 Oct, 2021 - Comments: 0

Achieving the auto industry's stringent zero defect goals is becoming a big challenge for makers of silicon carbide substrates, which are struggling to achieve sufficient yields and reliability as they migrate from 150mm to 200mm wafers and shift their focus away from pure silicon. SiC is a combination of silicon and harder carbide materials, and it has emerged as a key technology for batter... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 08 Oct, 2021 - Comments: 0

Government policy Hoping to resolve the ongoing worldwide chip shortage situation, the U.S. Department of Commerce late last month launched a “request for information (RFI)” initiative, which involved sending questionnaires to various semiconductor companies. The U.S. government is asking all parts of the supply chain – producers, consumers, and intermediaries – to voluntarily share in... » read more

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure
By Technical Paper Link - 06 Oct, 2021 - Comments: 0

Abstract "A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better quality and a lower dislocation density. In addition, the experimental results demonstrate that light output power and wall plug effici... » read more

The Silicon Carbide Race Begins
By Patrick Waurzyniak - 20 Sep, 2021 - Comments: 0

The growing adoption of silicon carbide (SiC) for a variety of automotive chips has reached the tipping point where most chipmakers now consider it a relatively safe bet, setting off a scramble to stake a claim and push this wide-bandgap technology into the mainstream. SiC holds great promise for a number of automotive applications, particularly for battery electric vehicles. It can extend d... » read more

Gearing Up For Next-Gen Power Semis
By Mark LaPedus - 16 Sep, 2021 - Comments: 0

After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Gallium Nitride — Gate Drive Solutions For CoolGaN 600V HEMTs
By Infineon - 08 Sep, 2021 - Comments: 0

This paper explains the gate drive requirements for Infineon’s CoolGaN 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical applicat... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 09 Jul, 2021 - Comments: 0

Chipmakers and OEMs China has been working on compound semiconductors, such as gallium-nitride (GaN) and silicon carbide (SiC). Now, a China-backed company has taken a big step in the SiC and related markets. Chip supplier Nexperia, a subsidiary of China’s Wingtech Technology, has acquired Newport Wafer Fab (NWF), a U.K.-based manufacture of power and compound semiconductors, including Si... » read more

Gate Drive Solutions For CoolGaN 600 V HEMTs
By Infineon - 08 Jul, 2021 - Comments: 0

This paper explains the gate drive requirements for Infineon’s CoolGaN 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical applicat... » read more

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