tag: GaN

Week In Review: Manufacturing, Test
By Mark LaPedus - 08 Oct, 2021 - Comments: 0

Government policy Hoping to resolve the ongoing worldwide chip shortage situation, the U.S. Department of Commerce late last month launched a “request for information (RFI)” initiative, which involved sending questionnaires to various semiconductor companies. The U.S. government is asking all parts of the supply chain – producers, consumers, and intermediaries – to voluntarily share in... » read more

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure
By Technical Paper Link - 06 Oct, 2021 - Comments: 0

Abstract "A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better quality and a lower dislocation density. In addition, the experimental results demonstrate that light output power and wall plug effici... » read more

The Silicon Carbide Race Begins
By Patrick Waurzyniak - 20 Sep, 2021 - Comments: 0

The growing adoption of silicon carbide (SiC) for a variety of automotive chips has reached the tipping point where most chipmakers now consider it a relatively safe bet, setting off a scramble to stake a claim and push this wide-bandgap technology into the mainstream. SiC holds great promise for a number of automotive applications, particularly for battery electric vehicles. It can extend d... » read more

Gearing Up For Next-Gen Power Semis
By Mark LaPedus - 16 Sep, 2021 - Comments: 0

After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Gallium Nitride — Gate Drive Solutions For CoolGaN 600V HEMTs
By Infineon - 08 Sep, 2021 - Comments: 0

This paper explains the gate drive requirements for Infineon’s CoolGaN 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical applicat... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 09 Jul, 2021 - Comments: 0

Chipmakers and OEMs China has been working on compound semiconductors, such as gallium-nitride (GaN) and silicon carbide (SiC). Now, a China-backed company has taken a big step in the SiC and related markets. Chip supplier Nexperia, a subsidiary of China’s Wingtech Technology, has acquired Newport Wafer Fab (NWF), a U.K.-based manufacture of power and compound semiconductors, including Si... » read more

Gate Drive Solutions For CoolGaN 600 V HEMTs
By Infineon - 08 Jul, 2021 - Comments: 0

This paper explains the gate drive requirements for Infineon’s CoolGaN 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical applicat... » read more

Manufacturing Bits: June 7
By Mark LaPedus - 07 Jun, 2021 - Comments: 0

High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

Manufacturing Bits: May 25
By Mark LaPedus - 25 May, 2021 - Comments: 0

Higher voltage GaN Imec and Aixtron have demonstrated the ability to extend gallium-nitride (GaN) to new voltage levels in the power semiconductor market, enabling the technology to compete in much broader segments. Imec and Aixtron have demonstrated epitaxial growth of GaN buffer layers qualified for 1,200-volt applications on specialized 200mm substrates with a hard breakdown exceeding 1,... » read more

Week In Review: Design, Low Power
By Jesse Allen - 07 May, 2021 - Comments: 0

Synopsys completed its acquisition of MorethanIP, a provider of Ethernet Digital Controller IP supporting data rates from 10G to 800G. The acquisition adds MAC (Medium Access Controller) and PCS (Physical Coding Sublayer) for 200G/400G and 800G Ethernet to Synopsys’ portfolio. The company also provides Time-Sensitive Networking, Fibre Channel, and Ethernet Switching IP for integration into AS... » read more

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