tag: gate-all-around FETs

New Design Approaches At 7/5nm
By Ed Sperling - 04 Mar, 2019 - Comments: 0

The race to build chips with a multitude of different processing elements and memories is making it more difficult to design, verify and test these devices, particularly when AI and leading-edge manufacturing processes are involved. There are two fundamental problems. First, there are much tighter tolerances for all of the components in those designs due to proximity effects. Second, as a re... » read more

Boosting Analog Reliability
By Ed Sperling - 17 Jan, 2019 - Comments: 0

Aveek Sarkar, vice president of Synopsys’ Custom Compiler Group, talks about challenges with complex design rules, rigid design methodologies, and the gap between pre-layout and post-layout simulation at finFET nodes. https://youtu.be/JRYlYJ31LLw » read more

What’s the Right Path For Scaling?
By Mark LaPedus - 02 Jan, 2019 - Comments: 1

The growing challenges of traditional chip scaling at advanced nodes are prompting the industry to take a harder look at different options for future devices. Scaling is still on the list, with the industry laying plans for 5nm and beyond. But less conventional approaches are becoming more viable and gaining traction, as well, including advanced packaging and in-memory computing. Some option... » read more

Some Chipmakers Sidestep Scaling, Others Hedge
By Ed Sperling - 15 Nov, 2018 - Comments: 0

The rising cost of developing chips at 7nm coupled with the reduced benefits of scaling have pried open the floodgates for a variety of options involving new materials, architectures and packaging that either were ignored or not fully developed in the past. Some of these approaches are closely tied to new markets, such as assisted and autonomous vehicles, robotics and 5G. Others involve new ... » read more

Power Issues Grow For Cloud Chips
By Ann Mutschler - 11 Oct, 2018 - Comments: 0

Performance levels in traditional or hyperscale data centers are being limited by power and heat caused by an increasing number of processors, memory, disk and operating systems within servers. The problem is so complex and intertwined, though, that solving it requires a series of steps that hopefully add up to a significant reduction across a system. But at 7nm and below, predicting exactly... » read more

Big Trouble At 3nm
By Mark LaPedus - 21 Jun, 2018 - Comments: 0

As chipmakers begin to ramp up 10nm/7nm technologies in the market, vendors are also gearing up for the development of a next-generation transistor type at 3nm. Some have announced specific plans at 3nm, but the transition to this node is expected to be a long and bumpy one, filled with a slew of technical and cost challenges. For example, the design cost for a 3nm chip could exceed an eye-p... » read more

Chip Dis-Integration
By Brian Bailey - 14 Jun, 2018 - Comments: 2

Just because something can be done does not always mean that it should be done. One segment of the semiconductor industry is learning the hard way that continued chip integration has a significant downside. At the same time, another another group has just started to see the benefits of consolidating functionality onto a single substrate. Companies that have been following Moore's Law and hav... » read more

New Transistor Types Vs. Packaging
By Ed Sperling - 11 Jun, 2018 - Comments: 0

Plans are being formulated for the rollout of multiple types of gate-all-around FETs and literally dozens of advanced packaging options. The question now is which ones will achieve critical mass, because there aren't enough chips in the world to support all of them profitably. FinFETs, which were first introduced by Intel at 22nm, are running out of steam. While they will survive 10/7nm, and... » read more

Quantum Effects At 7/5nm And Beyond
By Ed Sperling - 23 May, 2018 - Comments: 5

Quantum effects are becoming more pronounced at the most advanced nodes, causing unusual and sometimes unexpected changes in how electronic devices and signals behave. Quantum effects typically occur well behind the curtain for most of the chip industry, baked into a set of design rules developed from foundry data that most companies never see. This explains why foundries and manufacturing e... » read more

Tech Talk: 5/3nm Parasitics
By Ed Sperling - 22 Feb, 2018 - Comments: 0

Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs. https://youtu.be/24C6byQBkuI » read more

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