What to expect at future process nodes.
Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs.
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Interests: System-Level Design Low Power-High Performance Manufacturing, Packaging & Materials Test, Measurement & Analytics IoT, Security & Automotive
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