Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs.
Moving large amounts of data around a system is no longer the path to success. It is too slow and consumes too much power. It is time to flip the equation.
Experts at the Table: What are the limitations today that are preventing 3D-ICs from becoming mainstream, and which companies pushing to make it happen?
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