Single Vs. Multi-Patterning Advancements For EUV

By Gregory Haley - 20 Jun, 2024 - Comments: 0

As semiconductor devices become more complex, so do the methods for patterning them. Ever-smaller features at each new node require continuous advancements in photolithography techniques and technologies. While the basic lithography process hasn’t changed since the founding of the industry — exposing light through a reticle onto a prepared silicon wafer — the techniques and technology ... » read more

193i Lithography Takes Center Stage…Again

By Gregory Haley - 15 Jun, 2023 - Comments: 0

Cutting-edge lithography to create smaller features increasingly is being supplemented by improvements in lithography for mature process nodes, both of which are required as SoCs and complex chips are decomposed and integrated into advanced packages. Until the 7nm era, the primary goal of leading-edge chipmakers was to pack everything onto a single system-on-chip (SoC) using the same process... » read more

AI And High-NA EUV At 3/2/1nm

By Mark LaPedus - 16 Dec, 2020 - Comments: 1

Semiconductor Engineering sat down to discuss lithography and photomask issues with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Harry Levinson, principal at HJL Lithography; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What follows are excerpts of that conversation. To vie... » read more

Multi-Patterning EUV Vs. High-NA EUV

By Mark LaPedus - 04 Dec, 2019 - Comments: 4

Foundries are finally in production with EUV lithography at 7nm, but chip customers must now decide whether to implement their next designs using EUV-based multiple patterning at 5nm/3nm or wait for a new single-patterning EUV system at 3nm and beyond. This scenario revolves around ASML’s current extreme ultraviolet (EUV) lithography tool (NXE:3400C) versus a completely new EUV system with... » read more

Lithography Options For Next-Gen Devices

By Mark LaPedus - 18 Apr, 2019 - Comments: 2

Chipmakers are ramping up extreme ultraviolet (EUV) lithography for advanced logic at 7nm and/or 5nm, but EUV isn’t the only lithographic option on the table. For some time, the industry has been working on an assortment of other next-generation lithography technologies, including a new version of EUV. Each technology is different and aimed at different applications. Some are here today, w... » read more

Single Vs. Multi-Patterning EUV

By Mark LaPedus - 25 Mar, 2019 - Comments: 5

Extreme ultraviolet (EUV) lithography finally is moving into production, but foundry customers now must decide whether to implement their designs using EUV-based single patterning at 7nm, or whether to wait and instead deploy EUV multiple patterning at 5nm. Each patterning scheme has unique challenges, making that decision more difficult than it might appear. Targeted for 7nm, single pattern... » read more

EUV Mask Readiness Challenges

By Mark LaPedus - 21 Mar, 2019 - Comments: 0

Semiconductor Engineering sat down to discuss extreme ultraviolet (EUV) lithography and photomask technologies with Emily Gallagher, principal member of the technical staff at Imec; Harry Levinson, principal at HJL Lithography; Chris Spence, vice president of advanced technology development at ASML; Banqiu Wu, senior director of process development at Applied Materials; and Aki Fujimura, chief ... » read more

7nm Design Challenges

By Ed Sperling - 09 Jul, 2018 - Comments: 0

Ty Garibay, CTO at ArterisIP, talks about the challenges of moving to 7nm, who’s likely to head there, how long it will take to develop chips at that node, and why it will be so expensive. This also raises questions about whether chips will begin to disaggregate at 7nm and 5nm. https://youtu.be/ZqCAbH678GE » read more

Design Rule Complexity Rising

By Ed Sperling - 19 Apr, 2018 - Comments: 0

Variation, edge placement error, and a variety of other issues at new process geometries are forcing chipmakers and EDA vendors to confront a growing volume of increasingly complex, and sometimes interconnected design rules to ensure chips are manufacturable. The number of rules has increased to the point where it's impossible to manually keep track of all of them, and that has led to new pr... » read more

Tech Talk: 5/3nm Parasitics

By Ed Sperling - 22 Feb, 2018 - Comments: 0

Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs. https://youtu.be/24C6byQBkuI » read more

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