Lithography Options For Next-Gen Devices


Chipmakers are ramping up extreme ultraviolet (EUV) lithography for advanced logic at 7nm and/or 5nm, but EUV isn’t the only lithographic option on the table. For some time, the industry has been working on an assortment of other next-generation lithography technologies, including a new version of EUV. Each technology is different and aimed at different applications. Some are here today, w... » read more

Single Vs. Multi-Patterning EUV


Extreme ultraviolet (EUV) lithography finally is moving into production, but foundry customers now must decide whether to implement their designs using EUV-based single patterning at 7nm, or whether to wait and instead deploy EUV multiple patterning at 5nm. Each patterning scheme has unique challenges, making that decision more difficult than it might appear. Targeted for 7nm, single pattern... » read more

EUV Mask Readiness Challenges


Semiconductor Engineering sat down to discuss extreme ultraviolet (EUV) lithography and photomask technologies with Emily Gallagher, principal member of the technical staff at Imec; Harry Levinson, principal at HJL Lithography; Chris Spence, vice president of advanced technology development at ASML; Banqiu Wu, senior director of process development at Applied Materials; and Aki Fujimura, chief ... » read more

7nm Design Challenges


Ty Garibay, CTO at ArterisIP, talks about the challenges of moving to 7nm, who’s likely to head there, how long it will take to develop chips at that node, and why it will be so expensive. This also raises questions about whether chips will begin to disaggregate at 7nm and 5nm. https://youtu.be/ZqCAbH678GE » read more

Design Rule Complexity Rising


Variation, edge placement error, and a variety of other issues at new process geometries are forcing chipmakers and EDA vendors to confront a growing volume of increasingly complex, and sometimes interconnected design rules to ensure chips are manufacturable. The number of rules has increased to the point where it's impossible to manually keep track of all of them, and that has led to new pr... » read more

Tech Talk: 5/3nm Parasitics


Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs. https://youtu.be/24C6byQBkuI » read more

Reflections On 2017: Manufacturing And Markets


People love to make predictions, and most of the time they have it easy, but at Semiconductor Engineering, we ask them to look back on the predictions they make each year and to assess how close to the mark they were. To see what they missed and what surprised them. Not everyone accepts our offer to grade themselves, but many have this year. This is the first of two parts that looks at the pred... » read more

Unsolved Litho Issues At 7nm


By Ed Sperling & Mark LaPedus EUV lithography is creating a new set of challenges on the photomask side for which there currently are no simple solutions. While lithography is viewed as a single technology, [gettech id="31045" comment="EUV"] actually is a collection of technologies. Not all of those technologies have advanced equally and simultaneously, however. For example, aberrations... » read more

Tech Talk: 7nm Litho


David Fried, chief technology officer at Coventor, digs into future scaling issues involving multi-patterning and new transistor types. https://youtu.be/FBnYRAL1xKY Related Stories Inside Next-Gen Transistors Coventor’s CTO looks at new types of transistors, the expanding number of challenges at future process nodes & the state of semiconductor development in China. Faster Time T... » read more

Photoresist Shape In 3D


Things were easy for integrators when the pattern they had on the mask ended up being the pattern they wanted on the chip. Multi-patterning schemes such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP) have changed that dramatically. Now, what you have on the mask determines only a part of what you will get at the end. You will only obtain your final product... » read more

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