Germanium wedge-FETs pry away misfit dislocations

By Katherine Derbyshire - 23 Jan, 2014 - Comments: 1

Any approach to alternative channel integration must consider the lattice mismatch between silicon and other channel materials. Some schemes, such as IMEC’s selective epitaxy, view the lattice mismatch as an obstacle and look for ways to minimize its effects. This point of view certainly has merit: misfit dislocations do significantly degrade transistor performance. Still, back in 2011 Shu-Ha... » read more

What’s After Silicon?

By Katherine Derbyshire - 09 Jan, 2014 - Comments: 4

As discussed in the first article in this series, germanium is one of the leading candidates to succeed silicon as the channel material for advanced transistors, and has been for several years. The fundamental challenges of germanium integration were detailed at length in 2007. Unfortunately, knowing what the issues are does not necessarily lead to a solution. When a MOSFET transistor turns ... » read more

Alternative Channel Materials For Post-Silicon FinFETs

By Katherine Derbyshire - 16 Dec, 2013 - Comments: 4

At first glance, other semiconductors always have looked more attractive to device designers than silicon. Both germanium and III-V compound semiconductors have higher carrier mobility, allowing faster switching at the same device size. And yet, as manufacturers begin to consider alternative channel materials for sub-10nm devices, the industry is remembering why silicon became a standard in ... » read more

450mm: Out Of Sync

By Mark LaPedus - 18 Jul, 2013 - Comments: 0

By Mark LaPedus The IC industry has been talking about it for ages, but vendors are finally coming to terms with a monumental shift in the business. The vast changes involve a pending and critical juncture, where the 450mm wafer size transition, new device architectures and other technologies will likely converge at or near the same time. In one possible scenario, 450mm fabs are projected ... » read more

Getting Ready For High-Mobility FinFETs

By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its second-generation finFET devices at 14nm by year’s end, with plans to debut its 11nm technology by 2015. Hoping to close the gap with Intel, silicon foundries are accelerating their efforts t... » read more

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tag: Germanium

Germanium wedge-FETs pry away misfit dislocations

What’s After Silicon?

Alternative Channel Materials For Post-Silicon FinFETs

450mm: Out Of Sync

Getting Ready For High-Mobility FinFETs