tag: Germanium

Will 7nm And 5nm Really Happen?
By Mark LaPedus - 19 Jun, 2014 - Comments: 11

As leading-edge chipmakers continue to ramp up their 28nm and 20nm devices, vendors are also updating their future technology roadmaps. In fact, IC makers are talking about their new shipment schedules for 10nm. And GlobalFoundries, Intel, Samsung and TSMC are narrowing down the options for 7nm, 5nm and beyond. There is a high probability that IC makers can scale to 10nm, but vendors face a ... » read more

Manufacturing Bits: June 10
By Ed Sperling - 10 Jun, 2014 - Comments: 2

Self-Assembling Nano Films Applying thin films with uniformity has always been an engineering challenge, but as feature sizes shrink the problem become even more pronounced. But a new approach developed by Lawrence Berkeley National Labs’ Materials Science Division could end up simplifying this process. The new approach used chloroform as an annealing solvent to create self-assembling arr... » read more

Power Moves Up To First Place
By Ed Sperling - 10 Apr, 2014 - Comments: 2

Virtually every presentation delivered about semiconductor design or manufacturing these days—and every end product specification that uses advanced technology—incorporates some reference to power and/or energy. It has emerged as the most persistent, most problematic, and certainly the most talked about issue from conception to marketplace adoption. And the conversation only grows louder... » read more

New Challenges For Post-Silicon Channel Materials
By Katherine Derbyshire - 21 Feb, 2014 - Comments: 1

In order to bring alternative channel materials into the CMOS mainstream, manufacturers need not just individual transistor devices, but fully manufacturable process flows. Work presented at the recent IEEE Electron Device Meeting (Washington, D.C., Dec. 9-11, 2013) showed that substantial work remains to be done on almost all aspects of such a flow. First and most fundamentally, it is diffi... » read more

The Search For The Next Transistor
By Mark LaPedus - 20 Feb, 2014 - Comments: 3

In the near term, the leading-edge chip roadmap looks fairly clear. Chips based on today’s finFETs and planar fully depleted silicon-on-insulator (FDSOI) technologies are expected to scale down to the 10nm node. But then, the CMOS roadmap becomes foggy at 7nm and beyond. The industry has been exploring a number of next-generation transistor candidates, but suddenly, a few technologies are ... » read more

Germanium wedge-FETs pry away misfit dislocations
By Katherine Derbyshire - 23 Jan, 2014 - Comments: 1

Any approach to alternative channel integration must consider the lattice mismatch between silicon and other channel materials. Some schemes, such as IMEC’s selective epitaxy, view the lattice mismatch as an obstacle and look for ways to minimize its effects. This point of view certainly has merit: misfit dislocations do significantly degrade transistor performance. Still, back in 2011 Shu-Ha... » read more

What’s After Silicon?
By Katherine Derbyshire - 09 Jan, 2014 - Comments: 4

As discussed in the first article in this series, germanium is one of the leading candidates to succeed silicon as the channel material for advanced transistors, and has been for several years. The fundamental challenges of germanium integration were detailed at length in 2007. Unfortunately, knowing what the issues are does not necessarily lead to a solution. When a MOSFET transistor turns ... » read more

Alternative Channel Materials For Post-Silicon FinFETs
By Katherine Derbyshire - 16 Dec, 2013 - Comments: 4

At first glance, other semiconductors always have looked more attractive to device designers than silicon. Both germanium and III-V compound semiconductors have higher carrier mobility, allowing faster switching at the same device size. And yet, as manufacturers begin to consider alternative channel materials for sub-10nm devices, the industry is remembering why silicon became a standard in ... » read more

450mm: Out Of Sync
By Mark LaPedus - 18 Jul, 2013 - Comments: 0

By Mark LaPedus The IC industry has been talking about it for ages, but vendors are finally coming to terms with a monumental shift in the business. The vast changes involve a pending and critical juncture, where the 450mm wafer size transition, new device architectures and other technologies will likely converge at or near the same time. In one possible scenario, 450mm fabs are projected ... » read more

Getting Ready For High-Mobility FinFETs
By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its second-generation finFET devices at 14nm by year’s end, with plans to debut its 11nm technology by 2015. Hoping to close the gap with Intel, silicon foundries are accelerating their efforts t... » read more

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