The High Price Of Smaller Features

By Katherine Derbyshire - 15 Sep, 2022 - Comments: 0

The semiconductor industry’s push for higher numerical apertures is driven by the relationship between NA and critical dimension. As the NA goes up, the CD goes down: Where λ is the wavelength and k1 is a process coefficient. While 0.55 NA exposure systems will improve resolution, Larry Melvin, principal engineer at Synopsys, noted that smaller features always come with a process cos... » read more

How Overlay Keeps Pace With EUV Patterning

By Laura Peters - 09 Aug, 2022 - Comments: 1

Overlay metrology tools improve accuracy while delivering acceptable throughput, addressing competing requirements in increasingly complex devices. In a race that never ends, on-product overlay tolerances for leading-edge devices are shrinking rapidly. They are in the single-digit nanometer range for the 3nm generation (22nm metal pitch) devices. New overlay targets, machine learning, and im... » read more

Nanosheet FETs Drive Changes In Metrology And Inspection

By Karen Heyman - 09 Aug, 2022 - Comments: 0

In the Moore’s Law world, it has become a truism that smaller nodes lead to larger problems. As fabs turn to nanosheet transistors, it is becoming increasingly challenging to detect line-edge roughness and other defects due to the depths and opacities of these and other multi-layered structures. As a result, metrology is taking even more of a hybrid approach, with some well-known tools moving... » read more

High-NA EUV May Be Closer Than It Appears

By Katherine Derbyshire - 16 Jun, 2022 - Comments: 1

High-NA EUV is on track to enable scaling down to the Angstrom level, setting the stage for chips with even higher transistor counts and a whole new wave of tools, materials, and system architectures. At the recent SPIE Advanced Lithography conference, Mark Phillips, director of lithography hardware and solutions at Intel, reiterated the company’s intention to deploy the technology in high... » read more

ASD process that was performed in situ on the etch chamber

By Technical Paper Link - 06 May, 2022 - Comments: 0

New research paper entitled "Plasma-based area selective deposition for extreme ultraviolet resist defectivity reduction and process window improvement" from TEL Technology Center, Americas and IBM Research. Abstract: "Extreme ultraviolet (EUV) lithography has overcome significant challenges to become an essential enabler to the logic scaling roadmap. However, it remains limited by stocha... » read more

Big Changes In Materials And Processes For IC Manufacturing

By Ed Sperling And Laura Peters - 21 Apr, 2022 - Comments: 3

Rama Puligadda, CTO at Brewer Science, sat down with Semiconductor Engineering to talk about a broad set of changes in semiconductor manufacturing, packaging, and materials, and how that will affect reliability, processes, and equipment across the supply chain. SE: What role do sacrificial materials play in semiconductor manufacturing, and how is that changing at new process nodes? Puliga... » read more

Unsolved Issues In Next-Gen Photomasks

By Mark LaPedus - 17 Feb, 2022 - Comments: 0

Experts at the Table: Semiconductor Engineering sat down to discuss optical and EUV photomasks issues, as well as the challenges facing the mask business, with Naoya Hayashi, research fellow at DNP; Peter Buck, director of MPC & mask defect management at Siemens Digital Industries Software; Bryan Kasprowicz, senior director of technical strategy at Hoya; and Aki Fujimura, CEO of D2S. What f... » read more

Photomask Challenges At 3nm And Beyond

By Mark LaPedus - 25 Jan, 2022 - Comments: 1

Business, Technology Challenges Increase For Photomasks

By Mark LaPedus - 16 Dec, 2021 - Comments: 0

Manufacturing Bits: Nov. 16

By Mark LaPedus - 16 Nov, 2021 - Comments: 0

New hybrid EUV photoresist The U.S. Department of Energy (DOE) has announced the winners for a recent entrepreneurial technology competition, including the development of a new EUV hybrid resist and an antibody therapeutics platform. The event, called the National Lab Accelerator Pitch Event, involved a competition among 11 researchers within the DOE’s national labs. Researchers pitched ... » read more

← Older posts Newer posts →

Knowledge Centers
Entities, people and technologies explored

Shift Left Is The Tip Of The Iceberg

A transformative change is underway for semiconductor design and EDA. New languages, models, and abstractions will need to be created.

by Brian Bailey

Partitioning In The Chiplet Era

Understanding how chiplets interact under different workloads is critical to ensuring signal integrity and optimal performance in heterogeneous designs.

by Ann Mutschler

3.5D: The Great Compromise

Pros and cons of a middle-ground chiplet assembly that combines 2.5D and 3D-IC.

by Ed Sperling

AI’s Role In Chip Design Widens, Drawing In New Startups

Focus is on letting engineers do much more with the same or fewer resources — and less drudgery.

by Karen Heyman

Key Technologies To Extend EUV To 14 Angstroms

Alongside high-NA EUV will be better-performing photoresists, reduced roughness using passivation and etch, and lateral etching to reduce tip-to-tip dimensions.

by Laura Peters

Memory Fundamentals For Engineers

eBook: Nearly everything you need to know about memory, including detailed explanations of the different types of memory; how and where these are used today; what's changing, which memories are successful and which ones might be in the future; and the limitations of each memory type.

by The SE Staff

What Comes After HBM For Chiplets

The standard for high-bandwidth memory limits design freedom at many levels, but that is required for interoperability. What freedoms can be taken from other functions to make chiplets possible?