tag: HKMG

MAC Operation on 28nm High-k Metal Gate FeFET-based Memory Array with ADC (Fraunhofer IPMS/GF)
By Technical Paper Link - 01 Dec, 2022 - Comments: 0

A technical paper titled "Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array" was published by researchers at Fraunhofer IPMS and GlobalFoundries. Abstract "This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide Semiconductor (CMOS) and ferroelectric fi... » read more

Five DAC Keynotes
By Brian Bailey - 17 Jul, 2018 - Comments: 0

The ending of Moore's Law may be about to create a new golden age for design, especially one fueled by artificial intelligence and machine learning. But design will become task-, application- and domain-specific, and will require that we think about the lifecycle of the products in a different way. In the future, we also will have to design for augmentation of experience, not just automation... » read more

What Are FeFETs?
By Mark LaPedus - 16 Feb, 2017 - Comments: 1

The memory market is going in several different directions at once. On one front, the traditional memory types, such DRAM and flash, remain the workhorse technologies in systems despite undergoing some changes in the business. Then, several vendors are readying the next-generation memory types in the market. As part of an ongoing series, Semiconductor Engineering will explore where the new a... » read more

FinFET Front-End-of-Line (FEOL) Process Integration With SEMulator3D
By Coventor - 19 Oct, 2016 - Comments: 0

Purely geometric scaling of transistors ended around the 90-nanometer (nm) era. Since then, most power/performance and area/cost improvements have come from structural and material innovations. Silicon-on-Insulator (SOI), first “partially depleted” and more recently “fully depleted” as well as embedded stressors, High-K / Metal-Gate (HKMG) and now FinFETs are examples of technology inno... » read more

Near-Threshold Computing
By Bhanu Kapoor - 13 Sep, 2012 - Comments: 0

By Bhanu Kapoor There were two main contributing factors to power becoming a big problem ("The Power Wall") starting around the 65nm process technology. First, the fast-growing leakage component became as significant as the dynamic power. Second, the scaling of the supply voltage stopped around 1.1 volts. Process technology advances such as HKMG and 3D tri-gate transistors have enabled con... » read more

The Trouble With FinFETs
By Joanne Itow - 16 Aug, 2012 - Comments: 0

By Joanne Itow The industry’s quest to continue on the semiconductor roadmap defined by Moore’s Law has led to the adoption of a new transistor structure. Whether you call them finFETs, tri-gate or 3D transistors, building these new devices is difficult. But the technology is only half the challenge. In 2002, Chen Ming Hu* spoke at the Semico Summit. The title of his presentation was �... » read more

All Indicators Point North
By Ed Sperling - 28 Jun, 2012 - Comments: 0

Designing and producing chips has always been difficult, but the number of things that conspire to make it harder at 20nm is the longest in the history of the semiconductor industry. The list will grow longer still at 14nm and beyond, not to mention so expensive that one mistake will kill a company. While system engineers and architects look at the challenges on the front end, the problems ... » read more

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