Power Shift


By Ed Sperling For the past decade, most of the real gains in energy efficiency were developed for chips inside mobile electronics because of the demand for longer battery life. Dark silicon now represents the majority of mobile devices, multiple power islands are commonplace to push many functions into deep sleep, and performance is usually the secondary concern for most applications. Whil... » read more

The Hidden Costs Of Directed Self-Assembly


By Mark LaPedus Directed self-assembly (DSA) has been billed by some as a potential paradigm shift in semiconductor manufacturing, but it may not turn out to be quite the panacea its proponents suggest—or at least not yet. There are many questions surrounding DSA, an alternative lithography technology that makes use of block copolymers to enable fine pitches. Key among those questions ar... » read more

ASMC: TSVs Needed as Scaling Challenges Mount


By David Lammers With the industry facing challenges in the introduction of EUV lithography and high costs for double patterning, TSV introductions have taken on heightened importance, participants said at the SEMI Advanced Semiconductor Manufacturing Conference (ASMC), held in Saratoga Springs, N.Y. in mid-May. Risto Puhakka, president of market research firm VLSI Research Inc., said the g... » read more

New Processes Define New Power Plans


By Pallab Chatterjee FinFETs, stacked die, heterogeneous interposers, TSVs, 450mm wafers, new interconnects and everything with MEMs and sensors is what the last few weeks have brought. A number of major announcements, technology releases, conference updates have identified these technologies as the future of IC design. At ISQED, Robert Geer, chief academic officer at the College of Nanosca... » read more

Consortium Results (Part 3 of 3): 20nm FDSOI Comes Out Way Ahead


The results of the most recent SOI Consortium benchmarking study detail the interest of planar FD-SOI as early as the 28nm and 20nm technology nodes, in terms of performance, power and manufacturability. This 3-part blog series looks further at some of the implications. ~~ The SOI Industry Consortium announcement at the end of the year provided silicon proof that FD-SOI handily bea... » read more

Coherency Becomes A Stack Of Issues


By Ed Sperling As complexity increases and the industry increasingly shifts away from ASICs to SoCs, the concept of coherency is beginning to look more like a stack of issues than a discrete piece of the design. There are at least five levels of coherency that need to be considered already, with more likely to surface as stacked die become mainstream over the next few years. Perhaps even mo... » read more

Why PCs And Servers Aren’t Going Away


By Pallab Chatterjee With the rise of mobile appliances, smart phones and tablets, there has been a lot of discussion about the place for PCs, servers, embedded processors and networks. A number of companies have claimed they will rule the world of computing and there will no room for others. Reality seems to be somewhat different, however. The mobile end point devices—smart phones, table... » read more

FD-SOI – Consortium Results (Part 2 of 3): Power and Performance


The results of the most recent SOI Consortium benchmarking study detail the interest of planar FD-SOI as early as the 28nm and 20nm technology nodes, in terms of performance, power and manufacturability. This 3-part blog series looks further at some of the implications. ~~ Fully depleted transistor architectures such as Planar FD-SOI, FinFETs (which is also a fully-depleted technolog... » read more

FD-SOI Workshop ppts – STM’s 1st 28nm FD-SOI product line


The SOI Consortium’s 6th FD-SOI workshop, held just after ISSCC, yielded some exciting news. Most of the presentations are freely available for downloading from the SOI Consortium website. Here are the highlights. STMicroelectronics In a terrific presentation by Giorgio Cesana, Marketing Director at STMicroelectronics, he revealed that the company would be releasing a major product line b... » read more

FD-SOI – Recent Consortium Results (Part 1 of 3): Manufacturing


The most recent SOI Consortium benchmarking study regarding 28nm and 20nm FD-SOI results (silicon-calibrated simulations at the 28nm node of complex circuits including ARM cores and DDR3 memory controllers) covered a lot of ground. This post is part 1 of a 3-part blog series that will be highlighting key points with respect to: 1. manufacturing; 2. power & performance; 3. 20nm benchmarking ... » read more

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