Week In Review: Manufacturing, Test


Materials A major setback has been dealt to the United States’ efforts to develop rare earths. The U.S. is attempting to develop its own supply of rare earths, hoping to reduce its reliance on China. China controls nearly 90% of the world’s rare earths, which are used in magnets and various electronic systems. In April, the U.S. Department of Defense (DoD) awarded two U.S.-based firms, Lyn... » read more

Memory Issues For AI Edge Chips


Several companies are developing or ramping up AI chips for systems on the network edge, but vendors face a variety of challenges around process nodes and memory choices that can vary greatly from one application to the next. The network edge involves a class of products ranging from cars and drones to security cameras, smart speakers and even enterprise servers. All of these applications in... » read more

Scaling Up Compute-In-Memory Accelerators


Researchers are zeroing in on new architectures to boost performance by limiting the movement of data in a device, but this is proving to be much harder than it appears. The argument for memory-based computation is familiar by now. Many important computational workloads involve repetitive operations on large datasets. Moving data from memory to the processing unit and back — the so-called ... » read more

AI And Big Data Set To Reinvent Semiconductor Industry


The recent IEEE International Electron Devices Meeting (IEDM) reaffirmed that the semiconductor industry is in a period of reinvention as we grapple with the challenges and opportunities promised by the Internet of Things (IoT), Big Data and AI. That such change is underway was made evident by a panel I was honored to moderate titled, “The Future of Logic: EUV is Here, Now What?” Joining... » read more

Week In Review: Manufacturing, Test


Fab tools, chips and technologies What happened at the SEMI Industry Strategy Symposium (ISS) this week? The annual three-day conference of executives gave the year’s first comprehensive outlook of the global electronics manufacturing industry. Click here to see the details. CyberOptics has unveiled its new WaferSense Auto Resistance Sensor (ARS) and its CyberSpectrum software. The produc... » read more

Manufacturing Bits: Jan. 7


Beyond 5G chips At the recent IEEE International Electron Devices Meeting (IEDM), NTT and the Tokyo Institute of Technology presented a paper on a technology that could enable high-speed wireless devices beyond the 5G standard. Researchers have devised a 300GHz wireless transceiver (TRx) that supports a data rate of more than 100Gb/s. The device is based on a technology called indium phosph... » read more

Manufacturing Bits: Dec. 31


GaN-on-SOI power semis At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN power devices. With GaN-on-SOI technology, researchers have developed a 200-volt GaN power semiconductor device with an integrated driver and fast switching performance. ... » read more

Where Technology Breakthroughs Are Needed


After years of delays, extreme ultraviolet (EUV) lithography is finally in production at the 7nm logic node with 5nm in the works. EUV, a next-generation lithography technology, certainly will help chipmakers migrate to the next nodes. But EUV doesn’t solve every problem. Nor does it address all challenges in the semiconductor industry. Not by a long shot. To be sure, the industry needs... » read more

Manufacturing Bits: Dec. 16


Imec-Leti alliance At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Leti announced plans to collaborate in select areas. The two R&D organizations plan to collaborate in two areas—artificial intelligence (AI) and quantum computing. Imec and Leti have been separately working on AI technologies based on various next-generation memory architectures. Both entitie... » read more

Building An MRAM Array


MRAM is gaining traction in a variety of designs as a middle-level type of memory, but there are reasons why it took so long to bring this memory to market. A typical magnetoresistive RAM architecture is based on CoFeB magnetic layers, with an MgO tunneling barrier. The reference layer should have zero net magnetization to make sure that it doesn’t influence the orientation of the free lay... » read more

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