IoT Security: Confusing And Fragmented


Security regulations for Internet-of-Things (IoT) devices are evolving around the world, but there is no consistent set of requirements that can be applied globally — and there may never be. What exists today is a patchwork of certification labs and logos. That makes it difficult for IoT-device designers to know where to get their security blessed. Unlike in data centers, where there is a ... » read more

Manufacturing Bits: June 22


5G metasurface antennas At the recent 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), the Institute of Microelectronics of the Chinese Academy of Sciences (CAS) presented a paper on a low-profile broadband metasurface antenna for 5G antenna-in-package applications. The National Center for Advanced Packaging and the University of Chinese Academy of Sciences also contri... » read more

Week In Review: Manufacturing, Test


Fab tools TEL plans to ship its leading-edge coater/developer system to the joint Imec-ASML research lab, which is working on high-NA extreme ultraviolet (EUV) lithography. The equipment will be integrated with the EXE:5000, ASML’s next-generation high-NA EUV lithography system. The 0.55 numerical aperture (NA) tool is slated to be operational in 2023. Today's EUV is in production, but there... » read more

Is There a Practical Test For Rowhammer Vulnerability?


Rowhammer is proving to be a difficult DRAM issue to fix. While efforts continue to mitigate or eliminate the effect, no solid solution has yet made it to volume production. In addition, more aggressive process nodes are expected to exacerbate the problem. In the absence of a fix, then, testing may be one way to give DRAM manufacturers and users some way to segregate devices that are more su... » read more

Where Imperfections Lead To Opportunity


By Evelyn Hu It is natural to hold a bias that assumes that the highest-quality devices are those formed from the most perfect materials (crystalline, well-ordered, stoichiometric). Therefore, it is ironic, and perhaps counterintuitive, that particular kinds of defects, such as vacancies (missing atoms) in semiconductor materials, can form the building blocks of a new quantum information tec... » read more

The Increasingly Uneven Race To 3nm/2nm


Several chipmakers and fabless design houses are racing against each other to develop processes and chips at the next logic nodes in 3nm and 2nm, but putting these technologies into mass production is proving both expensive and difficult. It's also beginning to raise questions about just how quickly those new nodes will be needed and why. Migrating to the next nodes does boost performance an... » read more

Chasing Test Escapes In IC Manufacturing


The number of bad chips that slip through testing and end up in the field can be significantly reduced before those devices ever leave the fab, but the cost of developing the necessary tests and analyzing the data has sharply limited adoption. Determining an acceptable test escape metric for an IC is essential to improving the yield-to-quality ratio in chip manufacturing, but what exactly is... » read more

Week In Review: Auto, Security, Pervasive Computing


Pervasive computing — IoT, edge, cloud, data center, and back Foxconn (also known as Hon Hai Technology Group) is forming a joint venture (JV) with Yageo Group, a component production and process management company for EVs and other high-end electronics, to focus on the development of semiconductors under $2 USD, which they call “small ICs.” Through the JV, a new company called XSemi wil... » read more

Part Average Tests For Auto ICs Not Good Enough


Part Average Testing (PAT) has long been used in automotive. For some semiconductor technologies it remains viable, while for others it is no longer good enough. Automakers are bracing for chips developed at advanced process nodes with much trepidation. Tight control of their supply chains and a reliance upon mature electronic processes so far have enabled them to increase electronic compone... » read more

Manufacturing Bits: Feb. 2


Capacitor-less DRAM At the recent 2020 International Electron Devices Meeting (IEDM), Imec presented a paper on a novel capacitor-less DRAM cell architecture. DRAM is used for main memory in systems, and today’s most advanced devices are based on roughly 18nm to 15nm processes. The physical limit for DRAM is somewhere around 10nm. DRAM itself is based on a one-transistor, one-capacito... » read more

← Older posts Newer posts →