tag: IEEE

Manufacturing Bits: Nov. 25
By Mark LaPedus - 25 Nov, 2020 - Comments: 0

Lidar-on-a-chip At the upcoming IEEE International Electron Devices Meeting (IEDM), Samsung will present a paper on the industry’s first single-chip lidar beam scanner. (Go to this link and then look for paper 7.2, “Single-Chip Beam Scanner with Integrated Light Source for Real-Time Light Detection and Ranging,” J. Lee et al, Samsung.) Lidar, or light imaging, detection, and ranging, ... » read more

Manufacturing Bits: Nov. 17
By Mark LaPedus - 17 Nov, 2020 - Comments: 0

Intel’s gate-all-around FETs At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel is expected to present papers on its efforts to develop gate-all-around transistors. One paper from Intel describes a more conventional gate-all-around transistor technology called a nanosheet FET. Another paper involves a next-generation NMOS-on-PMOS nanoribbon transistor technology. (F... » read more

112G SerDes Reliability
By Ed Sperling - 05 Oct, 2020 - Comments: 0

Priyank Shukla, product marketing manager at Synopsys, digs into 112Gbps SerDes, why it’s important to examine the performance of these devices in the context of a system, what is acceptable channel loss, and how density can affect performance, power and noise. » read more

The Next Leap
By Ed Sperling - 14 Aug, 2020 - Comments: 0

Some interesting new technologies are about to go on display. Chipmakers and systems companies have been working on quantum computing, photonics, and specialized AI processors, for the past several years, and those efforts are beginning to gain momentum. The goal is no longer a doubling of performance and power. It's now orders of magnitude improvement, and next week's Hot Chips conference i... » read more

Problems And Solutions In Analog Design
By Ann Mutschler - 05 Aug, 2020 - Comments: 1

Advanced chip design is becoming a great equalizer for analog and digital at each new node. Analog IP has more digital circuitry, and digital designs are more susceptible to kinds of noise and signal disruption that have plagued analog designs for years. This is making the design, test and packaging of SoCs much more complicated. Analog components cause the most chip production test failures... » read more

Open-Source Verification
By Brian Bailey - 30 Jul, 2020 - Comments: 1

Ask different people what open-source verification means and you will get a host of different answers. They range from the verification of open-source hardware, to providing an open-source verification infrastructure, to providing open-source stream generators or reference models, to open-source simulators and formal verification engines. Verification is about reducing risk. "Verification is... » read more

What’s After 5G
By Bryon Moyer - 20 Jul, 2020 - Comments: 1

This year’s IEEE Symposia on VLSI Technology and Circuits (VLSI 2020) included a presentation by NTT Docomo that looked far into the future of cellular communications, setting the stage for a broad industry shift in communication. This is far from trivial. 5G only just recently entered the commercial world, and — especially with the higher millimeter-wave (mmWave) frequencies — it has ... » read more

Generalized Class-E Power Amplifier With Shunt Capacitance And Shunt Filter
By Various Writers - 16 Jul, 2020 - Comments: 0

This paper presents a generalized analysis of the Class-E power amplifier (PA) with a shunt capacitance and a shunt filter, leading to a revelation of a unique design flexibility that can be exploited either to extend the maximum operating frequency of the PA or to allow the use of larger active devices with higher power handling capability. The proposed PA fulfills zero voltage switching (ZVS)... » read more

Manufacturing Bits: June 30
By Mark LaPedus - 30 Jun, 2020 - Comments: 0

1μm pitch wafer bonding At the recent IEEE Electronic Components and Technology Conference (ECTC), Imec presented a paper on a fine-pitch hybrid wafer-to-wafer bonding technology for heterogeneous integration. Imec described a way to enable hybrid bond pitches down to 1μm using a novel Cu/SiCN (copper/silicon-carbon-nitrogen) surface topography. Today, the industry is developing or shi... » read more

Manufacturing Bits: June 16
By Mark LaPedus - 16 Jun, 2020 - Comments: 0

GaN power modules Gallium-nitride (GaN) devices are emerging in several markets, such as power semiconductors and RF. GaN, a binary III-V compound, is a wide-bandgap technology, meaning it is faster and more efficient than silicon-based devices. GaN has 10 times the breakdown field strength with double the electron mobility than silicon. Generally, some GaN vendors don’t use a traditio... » read more

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