TFETs Cut Sub-Threshold Swing

By Katherine Derbyshire - 16 Mar, 2017 - Comments: 0

One of the main obstacles to continued transistor scaling is power consumption. As gate length decreases, the sub-threshold swing (SS) — the gate voltage required to change the drain current by one order of magnitude — increases. As Qin Zhang, Wei Zhao, and Alan Seabaugh of Notre Dame explained in 2006, SS faces a theoretical minimum of 60 mV/decade at room temperature in conventional MO... » read more

Inside Lithography And Masks

By Mark LaPedus - 16 Mar, 2017 - Comments: 2

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; David Fried, chief technology officer at [getentity id="22210" e_name="Cove... » read more

Manufacturing Bits: March 7

By Mark LaPedus - 07 Mar, 2017 - Comments: 0

Materials database Electronic materials and nanocrystals are used in a variety of applications. To integrate materials and crystals in devices, researchers must search in multiple places to discover new technologies and their various properties. On top of that, researchers may require long hours in the lab, and large computational resources, to enable new materials. Seeking to help res... » read more

Progress In Flexible Electronics

By Katherine Derbyshire - 16 Feb, 2017 - Comments: 0

Flexible electronics have been proposed for a wide variety of applications, from pulse and activity monitoring to electrolyte balance measurements. That makes generalizations difficult, but most proposed devices involve some combination of [getkc id="187" kc_name="sensors"], a power source, onboard data storage and analysis electronics, and some form of communications for configuration and data... » read more

Managing Parasitics For Transistor Performance

By Katherine Derbyshire - 30 Jan, 2017 - Comments: 3

The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for most of the IC industry's history, these have been sufficient. “Parasitic” or “external” resistances and capacitances from structures outside the transistor have been small enough to discoun... » read more

What’s Next For Transistors

By Mark LaPedus - 23 Jan, 2017 - Comments: 1

The IC industry is moving in several different directions at once. The largest chipmakers continue to march down process nodes with chip scaling, while others are moving towards various advanced packaging schemes. On top of that, post-CMOS devices, neuromorphic chips and quantum computing are all in the works. Semiconductor Engineering sat down to discuss these technologies with Marie Semeri... » read more

China Unveils Memory Plans

By Mark LaPedus - 19 Jan, 2017 - Comments: 2

Backed by billions of dollars in government funding, China in 2014 launched a major initiative to advance its domestic semiconductor, IC-packaging and other electronic sectors. So far, though, the results are mixed. China is making progress in IC-packaging, but the nation’s efforts to advance its domestic logic and memory sectors are still a work in progress. In fact, China has yet to achi... » read more

Uncertainty Grows For 5nm, 3nm

By Mark LaPedus - 19 Dec, 2016 - Comments: 4

As several chipmakers ramp up their 10nm finFET processes, with 7nm just around the corner, R&D has begun for 5nm and beyond. In fact, some are already moving full speed ahead in the arena. [getentity id="22586" comment="TSMC"] recently announced plans to build a new fab in Taiwan at a cost of $15.7 billion. The proposed fab is targeted to manufacture TSMC’s 5nm and 3nm processes, whic... » read more

The Week In Review: IoT

By Jeff Dorsch - 16 Dec, 2016 - Comments: 0

Tools Google this week updated its Internet of Things platform, releasing a Developer Preview for Android Things, enabling application developers to create IoT devices running on the mobile Android operating system. “We incorporated the feedback from Project Brillo to include familiar tools such as Android Studio, the Android Software Development Kit (SDK), Google Play Services, and Google C... » read more

5 Takeaways from IEDM

By Mark LaPedus - 15 Dec, 2016 - Comments: 1

As usual, the recent IEEE International Electron Devices Meeting (IEDM) was a busy week. The event, which took place in San Francisco, featured a plethora of subjects, such as next-generation transistors and memories. The event also included tracks on non-traditional approaches like quantum and neuromorphic computing. And then, there were sessions on power semis and others. In no partic... » read more

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TFETs Cut Sub-Threshold Swing

Inside Lithography And Masks

Manufacturing Bits: March 7

Progress In Flexible Electronics

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What’s Next For Transistors

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