tag: indium-gallium-arsenide

System Bits: March 5
By Jeff Dorsch - 05 Mar, 2019 - Comments: 0

The new electronics field of magnonics Transistors keep shrinking to dimensions that are difficult to fabricate. There is doubt in the semiconductor industry about the possibility of producing 1-nanometer features with existing process technology. The answer may lie in magnonic currents: quasi-particles associated with waves of magnetization, or spin waves, in magnetic materials. Researcher... » read more

Silicon Photonics Comes Into Focus
By Ed Sperling - 31 Oct, 2016 - Comments: 5

Silicon photonics is attracting growing attention and investment as a companion technology to copper wiring inside of data centers, raising new questions about what comes next and when. Light has always been the ultimate standard for speed. It requires less energy to move large quantities of data, generates less heat than electricity, and it can work equally well over long or short distances... » read more

Reliability After Planar Silicon
By Katherine Derbyshire - 29 Jul, 2015 - Comments: 2

Negative bias temperature instability (NBTI) poses a very serious reliability challenge for highly scaled planar silicon transistors, as previously discussed. However, the conventional planar silicon transistor appears to be nearing the end of its life for other reasons, too. The mobility of carriers in silicon limits switching speed even as it becomes more difficult to maintain sufficient elec... » read more

Still Waiting For III-V Chips
By Mark LaPedus - 19 Feb, 2015 - Comments: 0

For years, chipmakers have been searching for an alternative material to replace traditional silicon in the channel for advanced CMOS devices at 7nm and beyond. There’s a good reason, too: At 7nm, silicon will likely run out of steam in the channel. Until recently, chipmakers were counting on III-V materials for the channels, at least for NFET. Compared to silicon, III-V materials provide ... » read more

Next Channel Materials?
By Mark LaPedus - 22 Jan, 2015 - Comments: 0

Chipmakers are making a giant leap from planar transistors to [getkc id="185" kc_name="finFETs"]. Initially, [getentity id="22846" e_name="Intel"] moved into finFET production at 22nm and is now ramping up its second-generation finFETs at 14nm. And the other foundries will enter the finFET fray at 16nm/14nm. So what’s next? Chipmakers will likely extend the finFET architecture to both 10nm... » read more

Will 7nm And 5nm Really Happen?
By Mark LaPedus - 19 Jun, 2014 - Comments: 11

As leading-edge chipmakers continue to ramp up their 28nm and 20nm devices, vendors are also updating their future technology roadmaps. In fact, IC makers are talking about their new shipment schedules for 10nm. And GlobalFoundries, Intel, Samsung and TSMC are narrowing down the options for 7nm, 5nm and beyond. There is a high probability that IC makers can scale to 10nm, but vendors face a ... » read more

Getting Ready For High-Mobility FinFETs
By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its second-generation finFET devices at 14nm by year’s end, with plans to debut its 11nm technology by 2015. Hoping to close the gap with Intel, silicon foundries are accelerating their efforts t... » read more

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