tag: Korea Institute of Science and Technology

Split-Gate FETs (SG-FETs)
By Technical Paper Link - 21 Jul, 2022 - Comments: 0

This technical paper titled "Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications" was published by researchers at Department of Electrical and Computer Engineering, Inha University (South Korea) and Korea Institute of Science and Technology (KIST), Seoul. Abstract "Two-dimensional (2D) materials have been extensively adopted in variou... » read more

Research Bits: July 18
By Jesse Allen - 18 Jul, 2022 - Comments: 0

CXL memory disaggregation Researchers from the Korea Advanced Institute of Science and Technology (KAIST) developed a Compute Express Link (CXL) solution for directly accessible, high-performance memory disaggregation that they say significantly improves performance compared to existing remote direct memory access (RDMA)-based memory disaggregation. RDMA enables a host to directly access an... » read more

Spin–orbit torque engineering in β-W/CoFeB heterostructures with W–Ta or W–V alloy layers between β-W and CoFeB
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "The spin–orbit torque (SOT) resulting from a spin current generated in a nonmagnetic transition metal layer offers a promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, in practice, materials with high SOT efficiencies are indispensable. Moreover, new materials need to be compatible with semiconductor processing. This study introduce... » read more

Power/Performance Bits: Sept. 15
By Jesse Allen - 15 Sep, 2020 - Comments: 0

Higher-res lidar Researchers from Purdue University and École Polytechnique Fédérale de Lausanne (EPFL) devised a way to improve lidar and provide higher-resolution detection of nearby fast-moving objects through mechanical control and modulation of light on a silicon chip. "Frequency modulated continuous wave" (FMCW) lidar detects objects by scanning laser light from the top of a vehicl... » read more

Will Self-Heating Stop FinFETs
By Katherine Derbyshire - 20 Apr, 2017 - Comments: 0

New transistor designs and new materials don’t appear out of thin air. Their adoption always is driven by the limitations of the incumbent technology. Silicon germanium and other compound semiconductors are interesting because they promise superior carrier mobility relative to silicon. [getkc id="185" kc_name="FinFET"] transistor designs help minimize short channel effects, a critical limi... » read more

Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy