Chip Industry’s Technical Paper Roundup: May 2


New technical papers recently added to Semiconductor Engineering’s library: [table id=95 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us p... » read more

GaN Power Devices: Stability, Reliability and Robustness Issues


A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Chip Industry’s Technical Paper Roundup: Apr. 4


New technical papers recently added to Semiconductor Engineering’s library: [table id=90 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us p... » read more

Surface-Activated ALD For Room-Temperature Bonding of Al2O3


A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more

Chip Industry’s Technical Paper Roundup: Mar. 14


New technical papers recently added to Semiconductor Engineering’s library: [table id=86 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us ... » read more

Large Area Synthesis of 2D Material Hexagonal Boron Nitride, Improving Device Characteristics of Graphene


A new technical paper titled "Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays" was published by researchers at Kyushu University, National Institute of Advanced Industrial Science and Technology (AIST), and Osaka University. Abstract "Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical properti... » read more

Research Bits: Aug. 23


Algae-powered microprocessor Engineers from the University of Cambridge, Arm Research, Scottish Association for Marine Science, and Norwegian University of Science and Technology used a widespread species of blue-green algae to power an Arm Cortex M0+ microprocessor continuously for over a year. The algae, Synechocystis, is non-toxic and harvests energy from photosynthesis. The tiny electri... » read more

Technical Paper Round-up: May 3


New technical papers added to Semiconductor Engineering’s library this week. [table id=24 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

Pyrolyzed Cellulose Nanofiber Paper (CNP) Semiconductor with a 3D Network Structure


Abstract Semiconducting nanomaterials with 3D network structures exhibit various fascinating properties such as electrical conduction, high permeability, and large surface areas, which are beneficial for adsorption, separation, and sensing applications. However, research on these materials is substantially restricted by the limited trans-scalability of their structural design and tunability of... » read more

All-inorganic perovskite quantum dot light-emitting memories


Abstract "Field-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-e... » read more

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