tag: memory

HyperRAM As A Low Pin-Count Expansion Memory For Embedded Systems
By Infineon - 12 Jan, 2022 - Comments: 0

Rapid advances in microelectronics are driving mega trends across industries, creating a need for new technologies and optimized devices with better performance. With large volumes of data being made available due to the increasing content of electronics in automotive, industrial, smart home and IoT devices, there is a requirement to seamlessly process and render information. Application platfo... » read more

Scaling DDR5 RDIMMs To 5600 MT/s
By John Eble - 09 Dec, 2021 - Comments: 0

Looking forward to 2022, the first of the DDR5-based servers will hit the market with RDIMMs running at 4800 megatransfers per second (MT/s). This is a 50% increase in data rate over top-end 3200 MT/s DDR4 RDIMMs in current high-performance servers. DDR5 memory incorporates a number of innovations, such as Decision Feedback Equalization (DFE), and a new DIMM architecture which enable that speed... » read more

Outlook: DRAM, NAND, Next-Gen Memory
By Mark LaPedus - 18 Nov, 2021 - Comments: 0

Jim Handy, director at Objective Analysis, sat down with Semiconductor Engineering to talk about the 3D NAND, DRAM and next-generation memory markets. What follows are excerpts of that discussion. SE: How would you characterize the NAND market thus far in 2021? Handy: All chips are seeing unusual strength in 2021, but NAND flash and DRAM are doing what they usually do by exhibiting more e... » read more

A Deeper Look into RowHammer’s Sensitivities: Experimental Analysis of Real DRAM Chips and Implications on Future Attacks and Defenses
By Technical Paper Link - 14 Nov, 2021 - Comments: 0

Abstract "RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink. Recent studies demonstrate that modern DRAM chips, including chips previously marketed as RowHammer-safe, are even more vulnerable to RowHammer than... » read more

HBM2E Raises The Bar For Memory Bandwidth
By Rambus - 10 Nov, 2021 - Comments: 0

AI/ML training capabilities are growing at a rate of 10X per year driving rapid improvements in every aspect of computing hardware and software. HBM2E memory is the ideal solution for the high bandwidth requirements of AI/ML training, but entails additional design considerations given its 2.5D architecture. Designers can realize the full benefits of HBM2E memory with the silicon-proven memory s... » read more

More Errors, More Correction in Memories
By Bryon Moyer - 09 Nov, 2021 - Comments: 1

As memory bit cells of any type become smaller, bit error rates increase due to lower margins and process variation. This can be dealt with using error correction to account for and correct bit errors, but as more sophisticated error-correction codes (ECC) are used, it requires more silicon area, which in turn drives up the cost. Given this trend, the looming question is whether the cost of ... » read more

Standards for the Characterization of Endurance in Resistive Switching Devices
By Technical Paper Link - 03 Nov, 2021 - Comments: 0

Abstract "Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to... » read more

HBM3: Big Impact On Chip Design
By Ann Mutschler - 14 Oct, 2021 - Comments: 0

An insatiable demand for bandwidth in everything from high-performance computing to AI training, gaming, and automotive applications is fueling the development of the next generation of high-bandwidth memory. HBM3 will bring a 2X bump in bandwidth and capacity per stack, as well as some other benefits. What was once considered a "slow and wide" memory technology to reduce signal traffic dela... » read more

Multi-DRAM Memory Subsystems In SoCs
By Shyam Sharma - 14 Oct, 2021 - Comments: 0

Even with DRAM capacity going up with each generation of DRAM, the demand for memory densities by a variety of applications is growing at an even faster rate. To support these high memory densities and bus width requirements (that are typically more than what a single DRAM can support), almost all the new generation of memory subsystems and SoCs have multiple DRAM dies combined to effectively c... » read more

HBM3 Memory: Break Through To Greater Bandwidth
By Rambus - 06 Oct, 2021 - Comments: 0

AI/ML’s demands for greater bandwidth are insatiable driving rapid improvements in every aspect of computing hardware and software. HBM memory is the ideal solution for the high bandwidth requirements of AI/ML training, but it entails additional design considerations given its 2.5D architecture. Now we’re on the verge of a new generation of HBM that will raise memory and capacity to new hei... » read more

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