New Entrants Seek Niches in NAND Flash Fray

By Ed Sperling - 03 Apr, 2012 - Comments: 0

By Mark LaPedus For some time, the NAND flash market has been primarily dominated by five vendors: Micron, Samsung, SanDisk, SK Hynix and Toshiba. Other vendors have been seeking to get a foothold in the exploding market — with little or no luck. Intel Corp. and Powerchip Semiconductor Corp. have separately experienced limited success in NAND. And Elpida Memory Inc. and Spansion Inc. are... » read more

3D DRAM Makers Inch Closer To Production

By Ed Sperling - 01 Dec, 2011 - Comments: 0

By Mark LaPedus For some time, DRAM makers have been developing 3D memory chips, but commercial products still are not due out for some time because of technical and cost issues. But the advent of the 3D DRAM era could be near the turning point, as two memory rivals have separately moved to bring their respective technologies closer to production. In one move, Micron Technology Inc. has di... » read more

Limits For TSVs In 3D Stacks?

By Ed Sperling - 06 Oct, 2011 - Comments: 0

By Ed Sperling Semiconductor design always has been about solving technology issues one node at a time, often in the face of a perpetual barrage of looming problems. In fact, if there is any change at all, it’s in the number of threats that have to be solved now at each node, most of them driven by ever-increasing density and the laws of physics. Stacking die holds the promise of becoming... » read more

Bigger Pipes, New Priorities

By Ed Sperling - 28 Jul, 2011 - Comments: 0

By Ann Steffora Mutschler From the impact of stacking on memory subsystems to advances in computing architecture, Micron Technology is at the forefront in the memory industry. System-Level Design sat down to discuss challenges, as well as some possible solutions, that plague memory subsystem architects with Scott Graham, general manager for Micron’s Hybrid Memory Cube (HMC) and Joe Jeddeloh,... » read more

Getting Ready For 15nm

By Ed Sperling - 07 Oct, 2010 - Comments: 0

By David Lammers The trends towards vertical transistors, non-silicon channel materials, and resistive RAMs promise to hold center stage at the 2010 IEEE International Electron Devices Meeting (IEDM), set to begin Dec. 6 in San Francisco, Calif. (www.ieee-iedm.org) Taiwan Semiconductor Manufacturing Co. (TSMC, Hsinchu, Taiwan) will present a 22/20nm technology platform based on a FinFET arc... » read more

What’s Next After DRAM?

By Ed Sperling - 26 Aug, 2010 - Comments: 0

By Pallab Chatterjee At the most recent Denali Memcon, there was a panel discussion and debate about the future of DRAM and possible successor technologies. The discussion was moderated by Cadence’s Steve Leibson and featured Bob Merritt of Convergent Semiconductor, Barry Hoberman of Crocus, Ed Doller of Micron and Marc Greenberg of Denali/Cadence. The topic of the discuss was based on t... » read more

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