Growing Challenges With Wafer Bump Inspection


As advanced packaging goes mainstream, ensuring that wafer bumps are consistent has emerged as a critical concern for foundries and OSATs. John Hoffman, computer vision engineering manager at CyberOptics, talks about the shift toward middle-of-line and how that is affecting inspection and metrology, why there is so much concern over co-planarity and alignment, how variation can add up and creat... » read more

Breaking The 2nm Barrier


Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

5/3nm Wars Begin


Several foundries are ramping up their new 5nm processes in the market, but now customers must decide whether to design their next chips around the current transistor type or move to a different one at 3nm and beyond. The decision involves the move to extend today’s finFETs to 3nm, or to implement a new technology called gate-all-around FETs (GAA FETs) at 3nm or 2nm. An evolutionary step f... » read more

Variation At 10/7nm


Klaus Schuegraf, vice president of new products and solutions at PDF Solutions, explains why variability is a growing challenge at advanced nodes, why middle of line is now one of the big problem areas, and what happens when a via is misaligned due to a small process variation. https://youtu.be/jQfggOnxZJQ » read more

FinFET Metrology Challenges Grow


Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems in devices and processes. It helps to ensure yields in both the lab and fab. At 28nm and above, metrology is a straightforward... » read more

DSA Re-Enters Litho Picture


By Mark LaPedus and Ed Sperling Directed self-assembly (DSA) is moving back onto the patterning radar screen amid ongoing challenges in lithography. Intel continues to have a keen interest in [gettech id="31046" t_name="DSA"], while other chipmakers are taking another hard look at the technology, according to multiple industry sources. DSA isn't like a traditional [getkc id="80" kc_name="... » read more

New BEOL/MOL Breakthroughs?


Chipmakers are moving ahead with transistor scaling at advanced nodes, but it's becoming more difficult. The industry is struggling to maintain the same timeline for contacts and interconnects, which represent a larger portion of the cost and unwanted resistance in chips at the most advanced nodes. A leading-edge chip consists of three parts—the transistor, contacts and interconnects. The ... » read more

Inside FD-SOI And Scaling


Gary Patton, chief technology officer at [getentity id="22819" comment="GlobalFoundries"], sat down with Semiconductor Engineering to discuss FD-SOI, IC scaling, process technology and other topics. What follows are excerpts of that conversation. SE: In logic, GlobalFoundries is shipping 14nm finFETs with 7nm in the works. The company is also readying 22nm FD-SOI technology with 12nm FD-SOI ... » read more