Building CFETs With Monolithic And Sequential 3D

Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, uses multiple channel layers to maintain the overall channel length and necessary drive current while continuing to reduce the standard cell footprint. The follow-on technology, the CFET, pushes... » read more

3D-IC Design Challenges And Requirements

As demands accelerate for increasing density, higher bandwidths, and lower power, many IC design and packaging teams are taking a close look at vertical stacking multiple chips and chiplets. This technology, called 3D-IC, promises many advantages over traditional single-die planar designs. Some are using the term “More-than-Moore” to describe the potential of this new technology. Integratio... » read more

Momentum Builds For Monolithic 3D ICs

The 2.5D/3D chip market is heating up on several fronts. On one front, stacked-die using through-silicon vias (TSVs) is taking root. In a separate area, Samsung is sampling the world’s first 3D NAND device, with Micron and SK Hynix expected to follow suit. And now, there is another technology generating steam—monolithic 3D integrated circuits. In stacked-die, bare die are connected using... » read more