tag: MoS2

High-performance flexible nanoscale transistors based on transition metal dichalcogenides
By Technical Paper Link - 24 Aug, 2021 - Comments: 0

Read the paper here. Published June 17, 2021, Nature Electronics. Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advan... » read more

Power/Performance Bits: Aug. 24
By Jesse Allen - 24 Aug, 2021 - Comments: 0

Low power AI Engineers at the Swiss Center for Electronics and Microtechnology (CSEM) designed an SoC for edge AI applications that can run on solar power or a small battery. The SoC consists of an ASIC chip with RISC-V processor developed at CSEM along with two tightly coupled machine-learning accelerators: one for face detection, for example, and one for classification. The first is a bin... » read more

Power/Performance Bits: Dec. 7
By Jesse Allen - 07 Dec, 2020 - Comments: 0

Logic-in-memory with MoS2 Engineers at École Polytechnique Fédérale de Lausanne (EPFL) built a logic-in-memory device using molybdenum disulfide (MoS2) as the channel material. MoS2 is a three-atom-thick 2D material and excellent semiconductor. The new chip is based on floating-gate field-effect transistors (FGFETs) that can hold electric charges for long periods. MoS2 is particularly se... » read more

Power/Performance Bits: April 25
By Jesse Allen - 25 Apr, 2017 - Comments: 0

Thermal diode Engineers at the University of Nebraska-Lincoln developed a nano-thermal-mechanical device, or thermal diode, which uses heat as an alternative energy source that would allow computing at ultra-high temperatures. "If you think about it, whatever you do with electricity you should (also) be able to do with heat, because they are similar in many ways," said Sidy Ndao, assistan... » read more

Power/Performance Bits: Oct. 11
By Jesse Allen - 11 Oct, 2016 - Comments: 2

Getting to 1nm Researchers at the Lawrence Berkeley National Laboratory, UC Berkeley, University of Texas at Dallas, and Stanford University created a transistor with a working 1nm gate from carbon nanotubes and molybdenum disulfide (MoS2). "The semiconductor industry has long assumed that any gate below 5 nanometers wouldn't work, so anything below that was not even considered," said fir... » read more

Power/Performance Bits: May 10
By Jesse Allen - 10 May, 2016 - Comments: 0

Non-toxic thin-films A team at Australia's University of New South Wales achieved the world's highest efficiency using flexible solar cells that are non-toxic and cheap to make, with a record 7.6% efficiency in a 1cm2 area thin-film CZTS cell. Unlike its thin-film competitors, CZTS cells are made from abundant materials: copper, zinc, tin and sulphur, and has none of the toxicity problems... » read more

Manufacturing Bits: March 22
By Mark LaPedus - 22 Mar, 2016 - Comments: 0

Tunable windows Harvard University has put a new twist on tunable windows. Researchers have devised a new manufacturing technique that can change the opacity of a window. With the flip of a switch, the window can become cloudy, clear or somewhere in the middle. Tunable windows, which aren’t new, rely on electrochemical reactions. Typically, the glass is coated with materials using vacuum... » read more

Manufacturing Bits: Dec. 29
By Mark LaPedus - 29 Dec, 2015 - Comments: 0

Printing hair Using a low-cost, 3D printing technique, Carnegie Mellon University has found a way to produce hair-like strands and fibers. The printer produces plastic hair strand by strand. It takes about 20-25 minutes to generate hair on 10 square millimeters. A video can be seen here. [caption id="attachment_24544" align="alignleft" width="300"] 3D printed hair (Photo: Carnegie Mellon... » read more

Manufacturing Bits: Jan. 14
By Mark LaPedus - 14 Jan, 2014 - Comments: 0

MoS2 FETs Two-dimensional materials are gaining steam in the R&D labs. The 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is an attractive material for use in future field-effect transistors (FETs). MoS2 has several properties, including a non-zero band gap, atomic scale thickness and pristine int... » read more

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