tag: MOSFETs

The Ins And Outs Of Silicon Carbide
By Ed Sperling - 19 Mar, 2020 - Comments: 0

John Palmour, CTO at Cree, sat down with Semiconductor Engineering to talk about silicon carbide, how it compares to silicon, what's different from a design and packaging standpoint, and where it's being used. What follows are excerpts of that conversation. SE: SiC is well-understood in power electronics and RF, but is the main advantage the ability to run devices hotter than silicon, or is ... » read more

System-Level Electro-Thermal Analysis of RDS(ON) for Power MOSFET
By Cadence - 11 Mar, 2020 - Comments: 0

Authors: Rajen Murugan1, Nathan Ai2, and C.T. Kao2 1 Texas Instruments, Inc., Dallas, Texas, 75044, USA 2 Cadence Design Systems, Santa Clara, California, USA A coupled-electro-thermal RDS(ON) (drain to source ON resistance) co-analysis methodology for Power MOSFET is proposed. The methodology contains two functional modules: 1) physical field solvers and 2) equivalent circuit/network so... » read more

MOCVD Vendors Eye New Apps
By Mark LaPedus - 20 Feb, 2020 - Comments: 0

Several equipment makers are developing or ramping up new metalorganic chemical vapor deposition (MOCVD) systems in the market, hoping to capture the next wave of growth applications in the arena. Competition is fierce among the various MOCVD equipment suppliers in the market, namely Aixtron, AMEC and Veeco. In addition, MOCVD equipment suppliers are looking for renewed growth in 2020, but b... » read more

SiC Foundry Business Emerges
By Mark LaPedus - 23 Jan, 2020 - Comments: 1

Several third-party foundry vendors are entering or expanding their efforts in the silicon carbide (SiC) business amid booming demand for the technology. However, making a significant dent in the market will not be so easy for SiC foundry vendors and their customers. They are facing stiff competition from traditional SiC device vendors such as Cree, Infineon, Rohm and STMicroelectronics. ... » read more

Manufacturing Bits: Dec. 23
By Mark LaPedus - 23 Dec, 2019 - Comments: 0

Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

Power Semi Wars Begin
By Mark LaPedus - 23 Oct, 2019 - Comments: 1

Several vendors are rolling out the next wave of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC), setting the stage for a showdown against traditional silicon-based devices in the market. Power semiconductors are specialized transistors that incorporate different and competitive technologies like GaN, SiC and silicon. Power semis operate as a switch in high-volt... » read more

SiC Demand Growing Faster Than Supply
By Mark LaPedus - 23 May, 2019 - Comments: 2

The silicon carbide (SiC) industry is in the midst of a major expansion campaign, but suppliers are struggling to meet potential demand for SiC power devices and wafers in the market. In just one example of the expansion efforts, Cree plans to invest up to $1 billion to increase its SiC fab and wafer capacities. As part of the plan, Cree is developing the world’s first 200mm (8-inch) SiC f... » read more

What’s A Mott FET?
By Katherine Derbyshire - 17 Dec, 2018 - Comments: 0

The unique physics of two-dimensional semiconductors offers the potential for new kinds of switches that could extend the usefulness of conventional MOSFETs into a variety of new areas. A MOSFET applies a voltage to one side of the gate capacitor. The resulting electric field in the channel shifts the band structure and facilitates or impedes the flow of carriers. So as devices shrink, the g... » read more

SiC Chip Demand Surges
By Mark LaPedus - 20 Sep, 2018 - Comments: 0

The silicon carbide (SiC) power semiconductor market is experiencing a sudden surge in demand amid growth for electric vehicles and other systems. But the demand also is causing a tight supply of SiC-based devices in the market, prompting some vendors to add fab capacity in the midst of a tricky wafer-size transition. Some SiC device makers are transitioning from 4- to 6-inch wafers in the f... » read more

200mm Crisis?
By Mark LaPedus - 18 May, 2017 - Comments: 7

Over the last year or so, the IC industry has experienced an acute shortage of both 200mm fab capacity and 200mm equipment amid a surge of demand for certain chips. Right now, though, the 200mm shortfall is much worse than before. But this situation isn’t expected to improve for both elements in the second half of 2017, and perhaps beyond. On the capacity front, chipmakers are generally... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2025 SMG   |  Terms of Service  |  Privacy Policy