How Voltage-Controlled MRAM Devices Can Be Used To Create Unique Fingerprints Of Microelectronic Chips

A technical paper titled "Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage-Controlled Magnetic Tunnel Junctions" was published by researchers at Northwestern University, Western Digital Corporation, Fe Research Inc., and University of Messina. Abstract: "With the fast growth of the number of electronic devices on the internet of things (IoT), hardware-based securi... » read more

DW-MTJ Devices For Noise-Resilient Networks For Neuromorphic Computing On The Edge

A technical paper titled "Stochastic domain wall-magnetic tunnel junction artificial neurons for noise-resilient spiking neural networks" was published by researchers at University of Texas at Austin. Abstract: "The spatiotemporal nature of neuronal behavior in spiking neural networks (SNNs) makes SNNs promising for edge applications that require high energy efficiency. To realize SNNs in har... » read more

A Field-Free Switching Solution For SOT Magnetic Tunnel Junction Devices

A technical paper titled “Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current” was published by researchers at KU Leuven, ETH Zurich, and IMEC. Abstract: "Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, i... » read more

Scatterometry-Based Methodologies For Characterization Of MRAM Technology

Magnetoresistive random-access memory (MRAM) technology and recent developments in fabrication processes have shown it to be compatible with Si-based complementary metal oxide semiconductor (CMOS) technologies. The perpendicular spin transfer torque MRAM (STT-MRAM) configuration opened up opportunities for an ultra-dense MRAM evolution and was most widely adapted for its scalability. Insertion ... » read more

High Performance Memory: Novel Lateral Double Magnetic Tunnel Junction (MTJ) With An Orthogonal Polarizer

A new technical paper titled "Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory" was published by researchers at Hanyang University. Find the technical paper here. Published November 2022. Sin, S., Oh, S. Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory.... » read more

Radiation-Hardened Non-Volatile Magnetic Latch That Tolerates SNUs and DNUs

A research paper titled "A Radiation-Hardened Non-Volatile Magnetic Latch with High Reliability and Persistent Storage" was published by researchers at Anhui University, Hefei University of Technology, LIRMM, and Kyutech. According to the abstract: "Based on an advanced triple-path dual-interlocked-storage-cell (TPDICE) and MTJs, this paper proposes a radiation-hardened non-volatile magneti... » read more

Imaging Of Overlay And Alignment Markers Under Opaque Layers Using Picosecond Laser Acoustic Measurements

Optically opaque materials present a series of challenges for alignment and overlay in the semi-damascene process flow or after the processing of the magnetic tunnel junction (MTJ) of a Magnetic Random-Access Memory (MRAM). The overlay and alignment of a lithographically defined pattern on top of the pattern and the underlying layer is fundamental to device operation in all multi-layer patterne... » read more

A Compact Model For Scalable MTJ Simulation

Read the full technical paper. Published June 9, 2021. Abstract This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the stochastic behavior of MTJs and to generate Verilog-A compact models for their simulation in lar... » read more

Power/Performance Bits: May 10

Probabilistic bit Researchers at Tohoku University are working on building probabilistic computers by developing a spintronics-based probabilistic bit (p-bit). The researchers utilized magnetic tunnel junctions (MTJs). Most commonly used in MRAM technology, where thermal fluctuation typically poses a threat to the stable storage of information, in this case it was a benefit. The p-bits f... » read more

MRAM Evolves In Multiple Directions

Magnetoresistive RAM (MRAM) is one of several new non-volatile memory technologies targeting broad commercial availability, but designing MRAM into chips and systems isn't as simple as adding other types of memory. MRAM isn’t an all-things-for-all-applications technology. It needs to be tuned for its intended purpose. MRAMs targeting flash will not do as well targeting SRAMs, and vice vers... » read more

← Older posts