tag: nanowires

Define & Grow III–V Vertical Nanowires At A High Footprint Density on a Si Platform
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New technical paper titled "Directed Self-Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All-Around Deposition" is published from researchers at Lund University in Sweden. Abstract: "Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost-effective proc... » read more

Hybrid Sensing Platform w/Silicon Nanowires on a Fully Functional CMOS Chip Containing the Readout Electronics & Signal amplification
By Technical Paper Link - 03 Jun, 2022 - Comments: 0

New technical paper titled "Multisite Dopamine Sensing With Femtomolar Resolution Using a CMOS Enabled Aptasensor Chip" from TU Dresden, Riken Quantitative Biological Center, Imperial College London, NaMLab gGmbH, ETH Zürich, MaxWell Biosystems AG, TU Wien, and Institute of Radiopharmaceutical Cancer Research. Abstract "Many biomarkers including neurotransmitters are found in external bo... » read more

The resurrection of tellurium as an elemental two-dimensional semiconductor
By Technical Paper Link - 23 Mar, 2022 - Comments: 0

Abstract "The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, ... » read more

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation
By Technical Paper Link - 13 Feb, 2022 - Comments: 0

Abstract: "We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection method and a super-Nernstian internal amplification given by the double gate structure. We overcome the Debye screening of charged CRP proteins in solutions using antibodies fragments as c... » read more

High Electron Mobility in Strained GaAs Nanowires
By Technical Paper Link - 21 Dec, 2021 - Comments: 0

Abstract: "Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where elec... » read more

Power/Performance Bits: Sept. 28
By Jesse Allen - 28 Sep, 2021 - Comments: 0

Pneumatic memory Engineers at the University of California Riverside developed a pneumatic memory that can be used to control soft robots. Pneumatic soft robots use pressurized air to move soft, rubbery limbs and grippers, making them ideal for delicate tasks as well as safer to be around. However, they still require electronic valves and computers to control and maintain positions. The ... » read more

Impact Of GAA Transistors At 3/2nm
By Brian Bailey - 16 Aug, 2021 - Comments: 2

The chip industry is poised for another change in transistor structure as gate-all-around (GAA) FETs replace finFETs at 3nm and below, creating a new set of challenges for design teams that will need to be fully understood and addressed. GAA FETs are considered an evolutionary step from finFETs, but the impact on design flows and tools is still expected to be significant. GAA FETs will offer... » read more

Thinner Channels With 2D Semiconductors
By Katherine Derbyshire - 21 Jun, 2021 - Comments: 0

Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

Power/Performance Bits: May 18
By Jesse Allen - 18 May, 2021 - Comments: 0

Efficient high-voltage power conversion Researchers from École Polytechnique Fédérale de Lausanne (EPFL) and Enkris Semiconductor are working to design new power transistors with the aim of improving power converter efficiency. "We see examples of electric power losses every day, such as when the charger of your laptop heats up," said Elison Matioli, head of EPFL's POWERlab, noting that ... » read more

System Bits: March 5
By Jeff Dorsch - 05 Mar, 2019 - Comments: 0

The new electronics field of magnonics Transistors keep shrinking to dimensions that are difficult to fabricate. There is doubt in the semiconductor industry about the possibility of producing 1-nanometer features with existing process technology. The answer may lie in magnonic currents: quasi-particles associated with waves of magnetization, or spin waves, in magnetic materials. Researcher... » read more

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