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Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors

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A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work was partially supported by the Defense Threat Reduction Agency and by the U.S. Air Force Office of Scientific Research and Air Force Research Laboratory.

According to the paper, “this Perspective focuses on effects of size scaling and device architecture on the radiation response of nanoscale MOS transistors. Examples are provided that illustrate how MOS total-ionizing-dose (TID) response varies with (1) transistor length, width, and dielectric thickness, (2) the transition from planar to FinFET and nanowire geometries, and (3) the implementation of high-K dielectrics and progression toward three-dimensional (3D) IC structures.”

Find the technical paper here. Published August 2022.

D. M. Fleetwood , “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices”, Appl. Phys. Lett. 121, 070503 (2022) https://doi.org/10.1063/5.0105173.

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