Modulation of the Inner Gate Length in MFMIS NSFETs To Achieve Big Gains in Memory Window (Samsung, Seoul National Univ.)


A new technical paper titled "Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes" was published by researchers at Samsung and Seoul National University. Abstract "This work proposes a new way of lowering the area ratio (AR) between the ferroelectric and metal-oxide-semiconductor (MOS) regions of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) ... » read more

Integration Of Layered Semimetals With Conventional CMOS Platform


A technical paper titled “Layered semimetal electrodes for future heterogeneous electronics” was published by researchers at IIT Madras and Indian Institute of Science Education and Research. Abstract: "Integration of the emerging layered materials with the existing CMOS platform is a promising solution to enhance the performance and functionalities of the future CMOS based integrated cir... » read more

Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors


A new technical paper titled "Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices" was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work was partially supported by the Defense Threat Reduction Agency and by the U.S. Air Force Office of Scientific Research and Air Force Research Laboratory. According to the paper, "this Perspect... » read more