Photonic Packaging Resistant to Extreme Environments (NIST, Johns Hopkins, U. Of Maryland)


A new technical paper, "Photonic chip packaging for extreme environments" was published by NIST, Johns Hopkins and University of Maryland. Abstract "Integrated photonic sensors have advanced significantly in the past decade for an ever-increasing range of applications, driven by the inherent scalability of integrated photonics combined with the precision of nanofabrication. Robust and rug... » read more

The One Bit Problem That Can Break a System


Key Takeaways: Bit flipping is no longer a rare reliability issue but a systemic risk driven by shrinking process nodes, higher clock speeds, lower voltages, and radiation exposure, leading to silent data corruption and potential system failure. The same mechanisms that cause accidental bit flips can be deliberately exploited through techniques such as clock, voltage, laser, and rowhamm... » read more

FeFETs With Laminated Gate Stacks For Radiation Resilience in Vertical NAND (Georgia Tech)


A new technical paper, "Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack," was published by researchers at Georgia Tech. Abstract "NAND flash forms the core of modern solid-state storage, which is critical for data-intensive AI applications, yet charge-trap NAND suffers rapid threshold-voltage (Vth) degradation under ionizing radiation, causi... » read more

Overview Of Radiation Dose During X-ray Inspection Of Electronics


X-ray imaging of semiconductor and electronic devices is an invaluable tool; enabling non-invasive sub-surface inspection, identification of defects and measurement of critical dimensions. Figure 1 shows a schematic and description of a typical X-ray inspection system for electronics and semiconductor devices. Unfortunately, semiconductor devices are sensitive to sustained radiation dose, which... » read more

Materials And Technologies For High Temperature, Resilient Electronics


A technical paper titled “Materials for High Temperature Digital Electronics” was published by researchers at University of Pennsylvania, Air Force Research Laboratory, and Ozark Integrated Circuits. Abstract: "Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio... » read more

Selective Radiation Mitigation For Integrated Circuits


Shortened lifecycles and cost reduction coupled with the demand for advanced capabilities continue to challenge project teams delivering IC into space systems. To meet these demands, project teams must continue to evolve across all aspects of the lifecycle, including the implementation and verification of mitigation protections against single event effects. This paper defines a methodology t... » read more

GaN Power Devices: Stability, Reliability and Robustness Issues


A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Radiation-Hardened Non-Volatile Magnetic Latch That Tolerates SNUs and DNUs


A research paper titled "A Radiation-Hardened Non-Volatile Magnetic Latch with High Reliability and Persistent Storage" was published by researchers at Anhui University, Hefei University of Technology, LIRMM, and Kyutech. According to the abstract: "Based on an advanced triple-path dual-interlocked-storage-cell (TPDICE) and MTJs, this paper proposes a radiation-hardened non-volatile magneti... » read more

Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors


A new technical paper titled "Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices" was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work was partially supported by the Defense Threat Reduction Agency and by the U.S. Air Force Office of Scientific Research and Air Force Research Laboratory. According to the paper, "this Perspect... » read more

Novel Family of Semiconductors


New research paper titled "Semiconducting silicon–phosphorus frameworks for caging exotic polycations" from researchers at Department of Chemistry, Iowa State University, and Ames Laboratory, U.S. Department of Energy. Abstract "A series of novel semiconductors AAe6Si12P20X (A = Na, K, Rb, Cs; Ae = Sr, Ba; X = Cl, Br, I) is reported. Their crystal structures feature a tetrahedral Si–P f... » read more

← Older posts