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Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors


A new technical paper titled "Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices" was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work was partially supported by the Defense Threat Reduction Agency and by the U.S. Air Force Office of Scientific Research and Air Force Research Laboratory. According to the paper, "this Perspect... » read more