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Metrology Challenges For Gate-All-Around


Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in devices. Measuring and characterizing structures in devices has become more difficult and expensive at each new node, and the introduction of new types of transistors is making this even harder. Ev... » read more

Matching Between Simulations and Measurements As a Key Driver for Reliable Overlay Target Design


By S. Lozenko, B. Schulz, L. Fuerst, C. Hartig, and M. Ruhm of GlobalFoundries and T. Shapoval, G. Ben-Dov, Z. Lindenfeld,  R. Haupt, and R. Wang of KLA-Tencor Abstract Numerical simulation of overlay metrology targets has become a de-facto standard in advanced technology nodes. While appropriate simulation software is widely available in the industry alongside with metrics that allow sel... » read more

Optical Metrology Solutions For 10nm Films Process Control Challenges


By Sridhar Mahendrakar (a), Alok Vaida (a), Kartik Venkataraman (b), Michael Lenahan (a), Steven Seipp (a), Fang Fanga (a), Shweta Saxena (a), Dawei Hu (b), Nam Hee Yoon (b), Da Song (b), Janay Camp (b), Zhou Ren (b). [a: GlobalFoundries; b:KLA-Tencor] Controlling thickness and composition of gate stack layers in logic and memory devices is critical to ensure transistor performance meets r... » read more