EUV Mask Gaps And Issues

By Mark LaPedus - 08 May, 2019 - Comments: 1

Semiconductor Engineering sat down to discuss extreme ultraviolet (EUV) lithography and photomask technologies with Emily Gallagher, principal member of the technical staff at Imec; Harry Levinson, principal at HJL Lithography; Chris Spence, vice president of advanced technology development at ASML; Banqiu Wu, senior director of process development at Applied Materials; and Aki Fujimura, chief ... » read more

Single Vs. Multi-Patterning EUV

By Mark LaPedus - 25 Mar, 2019 - Comments: 5

Extreme ultraviolet (EUV) lithography finally is moving into production, but foundry customers now must decide whether to implement their designs using EUV-based single patterning at 7nm, or whether to wait and instead deploy EUV multiple patterning at 5nm. Each patterning scheme has unique challenges, making that decision more difficult than it might appear. Targeted for 7nm, single pattern... » read more

What’s Missing In EUV?

By Mark LaPedus - 17 May, 2018 - Comments: 0

Extreme ultraviolet (EUV) lithography is expected to move into production at 7nm and/or 5nm, but as previously reported, there are some gaps in the arena. At one time, the power source was the big problem, but that appears to be solved in the near term. Now, a phenomenon called stochastic effects, or random variations, are the biggest challenge for EUV lithography. But at most events, th... » read more

Next EUV Issue: Mask 3D Effects

By Mark LaPedus - 25 Apr, 2018 - Comments: 6

As extreme ultraviolet (EUV) lithography moves closer to production, the industry is paying more attention to a problematic phenomenon called mask 3D effects. Mask 3D effects involve the photomask for EUV. In simple terms, a chipmaker designs an IC, which is translated from a file format into a photomask. The mask is a master template for a given IC design. It is placed in a lithography scan... » read more

EUV’s New Problem Areas

By Mark LaPedus - 19 Mar, 2018 - Comments: 2

Extreme ultraviolet (EUV) lithography is moving closer to production, but problematic variations—also known as stochastic effects—are resurfacing and creating more challenges for the long-overdue technology. GlobalFoundries, Intel, Samsung and TSMC hope to insert [gettech id="31045" comment="EUV"] lithography into production at 7nm and/or 5nm. But as before, EUV consists of several compo... » read more

EUV Reticle Print Verification With Advanced Broadband Optical Wafer Inspection And e-Beam Review Systems

By KLA - 14 Feb, 2018 - Comments: 0

As the Extreme Ultraviolet (EUV) lithography ecosystem is being actively mapped out to enable sub-7nm design rule devices, there is an immediate and imperative need to identify the EUV reticle (mask) inspection methodologies. The introduction of additional particle sources due to the vacuum system and potential growth of haze defects or other film or particle depositions on the reticle, in comb... » read more

Searching For EUV Mask Defects

By Mark LaPedus - 19 Oct, 2017 - Comments: 2

Chipmakers hope to insert extreme ultraviolet (EUV) lithography at 7nm and/or 5nm, but several challenges need to be solved before this technology can be used in production. One lingering issue that is becoming more worrisome is how to find [gettech id="31045" comment="EUV"] mask defects. That isn't the only issue, of course. The industry continues to work on the power source and resists. Bu... » read more

Looming Issues And Tradeoffs For EUV

By Mark LaPedus - 25 Sep, 2017 - Comments: 5

Momentum is building for extreme ultraviolet (EUV) lithography, but there are still some major challenges to solve before this long-overdue technology can be used for mass production. [gettech id="31045" comment="EUV"] lithography—a next-generation technology that patterns tiny features on a chip—was supposed to move into production around 2012. But over the years, EUV has encountered se... » read more

Inside Lithography And Masks

By Mark LaPedus - 16 Mar, 2017 - Comments: 2

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; David Fried, chief technology officer at [getentity id="22210" e_name="Cove... » read more

More EUV Mask Gaps

By Mark LaPedus - 17 Nov, 2016 - Comments: 12

Extreme ultraviolet (EUV) lithography is at a critical juncture. After several delays and glitches, [gettech id="31045" comment="EUV"] is now targeted for 7nm and/or 5nm. But there are still a number of technologies that must come together before EUV is inserted into mass production. And if the pieces don’t fall into place, EUV could slip again. First, the EUV source must generate more ... » read more

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