Resist Sensitivity, Source Power, And EUV Throughput


In a recent article, I quoted 15 mJ/cm2 as the target sensitivity for EUV photoresists, and discussed the throughput that could be achieved at various source power levels. However, as a commenter on that article pointed out, reaching the 15 mJ/cm² target while also meeting line roughness requirements is itself a challenging problem. Because of the high energy of EUV photons, a highly sensitive... » read more

Is EUV Making Progress?


By Ann Steffora Mutschler & Ed Sperling EUV has been promised for a couple of decades, counted on for at least three process nodes on the ITRS roadmap, and considered essential to chip manufacturing since 22nm. Billions of dollars have been invested in R&D, engineering teams from around the world have contributed to its development, and still serious problems persist. Just how close... » read more

Manufacturing Bits: Sept. 3


Dancing With The Stars In telescopes, the ability to see distant stars and galaxies is driven by the light-gathering area and detectors in the system. In the last 50 years, the collecting area in large-scale telescopes has increased by only a factor of four, according to researchers from the University of California at Santa Barbara. Meanwhile, the sensitivity of CCD detectors has increased... » read more

EUV Remains Elusive


By David Lammers Intel’s decision to invest as much as $4.1 billion in ASML has raised overall confidence levels in EUV lithography, and should allow the Dutch lithography vendor to funnel more funds into the stubbornly difficult effort to raise the EUV source power. ASML has said it needs to reach 250 Watts of average source power to achieve the 125 wph throughputs sought by its early cu... » read more

Newer posts →