tag: power devices

Using FTIR To Improve SiC Power Device Performance
By Nick Keller - 09 Jan, 2024 - Comments: 0

The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst other compound semiconductor-based power devices such as gallium nitride (GaN) to change the world around us is even more impressive. Thanks to the role that SiC-based devices play in the increase... » read more

Addressing Trench Structures And Larger Wafers For Power Devices
By Vamsi Velidandla - 07 Nov, 2023 - Comments: 0

Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

Optimizing Metal Film Measurement On IGBT And MOSFET Power Devices With Picosecond Ultrasonic Technology
By Johnny Dai - 10 Oct, 2023 - Comments: 0

By Johnny Dai with Cheolkyu Kim and Priya Mukundhan In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power semiconductor devices will be insulated gate bipolar transistor (IGBT) and power metal oxide semiconductor field effect transistor (power MOSFET) ... » read more

How To Answer Five Common Questions About Power Module Current Density
By Wilfried Wessel - 08 Jun, 2023 - Comments: 0

Power module current density is an important factor in determining the efficiency and performance of power modules. This article answers five common questions about power module current density so you can make informed decisions when designing a power module for your application. 1. How many wire bonds are required? Generally, a higher current density requires an increased number of w... » read more

Testing High Power Discrete Devices
By Tom Tran - 06 Jun, 2023 - Comments: 0

Emerging markets are driving the evolution of discrete power devices. Increased power requirements mean more power is being driven through a smaller device, creating challenges in both device design and test. This video series, 3 for 3, provides 3 answers for 3 pressing questions about trends in semiconductor test, and how testing for high power discrete devices is evolving. » read more

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor
By Technical Paper Link - 05 May, 2023 - Comments: 0

A technical paper titled "Gate Drive Circuit Suitable for a GaN Gate Injection Transistor" was published by researchers at Nagoya University. Abstract "A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several studies in the lite... » read more

GaN Power Devices: Stability, Reliability and Robustness Issues
By Technical Paper Link - 30 Apr, 2023 - Comments: 0

A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Production Testing Of Discrete Power Products
By Vineet Pancholi - 20 Oct, 2022 - Comments: 0

By Vineet Pancholi and Dennis Dinawanao Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged modules are some of the more popular discrete products. Switches control the flow of current within a circuit. MOSFETs are a building block of most electronic... » read more

Week In Review: Design, Low Power
By Jesse Allen - 09 Sep, 2022 - Comments: 0

Revenue for the top 10 IC design houses globally hit US$ 39.6 billion in 2Q22, a 32% growth over the prior year, according to a Trendforce report. The firm contends this growth trend will be difficult to maintain due to the high preceding base period and overall worse market conditions. Renesas introduced a RISC-V MCU specifically optimized for advanced motor control systems. The new ASSP in... » read more

PCB Layout Tips For Low Side Gate Drivers With OCP
By Weidong Chu - 10 Mar, 2022 - Comments: 0

Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally controlled Power Factor Correction (PFC) applications with boost topology and ground reference switching. In PFC applications, shunts are used to sense power switch current or DC bus current... » read more

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