Clean Focus, Dose And CD Metrology For CD Uniformity Improvement


Authors: Honggoo Leea, Sangjun Hana, Minhyung Honga, Seungyong Kima, Jieun Leea, DongYoung Leea, Eungryong Oha, Ahlin Choia, Nakyoon Kimb, John C. Robinsonc, Markus Mengelc, Pablo Rovirac, Sungchul Yooc, Raphael Getinc, Dongsub Choib, Sanghuck Jeonb aSK Hynix, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, 467-701, Korea bKLA-Tencor Korea, Starplaza bldg., 53 Metapolis-ro, Hwasung... » read more

Improved Accuracy And Robustness For Advanced DRAM With Tunable Multi-Wavelength Imaging Scatterometry Overlay Metrology


By Honggoo Lee, Sangjun Han, Minhyung Hong, Jieun Lee, Dongyoung Lee, Ahlin Choi and Chanha Park of SK Hynix, and Dohwa Lee, Seongjae Lee, Jungtae Lee, Jeongpyo Lee, DongSub Choi, Sanghuck Jeon, Zephyr Liu, Hao Mei, Tal Marciano, Eitan Hajaj, Lilach Saltoun, Dana Klein, Eran Amit, Anna Golotsvan, Wayne Zhou, Eitan Herzl, Roie Volkovich and John C. Robinson of KLA. Abstract Overlay process c... » read more

3D NAND Metrology Challenges Growing


3D NAND vendors face several challenges to scale their devices to the next level, but one manufacturing technology stands out as much more difficult at each turn—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems and ensure yields for all chip types. In the case of 3D NAND, the metrology tools are becoming more expensive at each iteration... » read more

Matching Between Simulations and Measurements As a Key Driver for Reliable Overlay Target Design


By S. Lozenko, B. Schulz, L. Fuerst, C. Hartig, and M. Ruhm of GlobalFoundries and T. Shapoval, G. Ben-Dov, Z. Lindenfeld,  R. Haupt, and R. Wang of KLA-Tencor Abstract Numerical simulation of overlay metrology targets has become a de-facto standard in advanced technology nodes. While appropriate simulation software is widely available in the industry alongside with metrics that allow sel... » read more

In-Cell Overlay Metrology By Using Optical Metrology Tool


By Honggoo Lee, Sangjun Han, Minhyung Hong, Seungyong Kima, Jieun Lee, DongYoung Leea, Eungryong Oh, and Ahlin Choi of SK Hynix, and Hyowon Park, Waley Liang, DongSub Choi, Nakyoon Kim, Jeongpyo Lee, Stilian Pandev, Sanghuck Jeon, John C. Robinson of KLA-Tencor Abstract Overlay is one of the most critical process control steps of semiconductor manufacturing technology. A typical advanced s... » read more

Spectral Tunability For Accuracy, Robustness And Resilience


In overlay (OVL) metrology the quality of measurements and the resulting reported values depend heavily on the measurement setup used. For example, in scatterometry OVL (SCOL) metrology a specific target may be measured with multiple illumination setups, including several apodization options, two possible laser polarizations, and multiple possible laser wavelengths. Not all possible setups a... » read more

FinFET Metrology Challenges Grow


Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems in devices and processes. It helps to ensure yields in both the lab and fab. At 28nm and above, metrology is a straightforward... » read more

Overlay Challenges On The Rise


The overlay metrology equipment market is heating up at advanced nodes as the number of masking layers grows and the size of the features that need to be aligned continue to shrink. Both ASML and KLA-Tencor recently introduced new [getkc id="307" kc_name="overlay"] metrology systems, seeking to address the increasing precision required for lines, cuts and other features on each layer. At 10/... » read more

Accuracy In Optical Overlay Metrology


By Barak Bringoltz, Tal Marciano, Tal Yaziv, Yaron DeLeeuw, Dana Klein, Yoel Feler, Ido Adam, Evgeni Gurevich, Noga Sella, Ze’ev Lindenfeld, Tom Leviant, Lilach Saltoun, Eltsafon Ashwal, Dror Alumot and Yuval Lamhot, Xindong Gao, James Manka, Bryan Chen, and Mark Wagner. Abstract In this paper we discuss the mechanism by which process variations determine the overlay accuracy of optical m... » read more

Can We Measure Next-Gen FinFETs?


After ramping up their respective 16nm/14nm finFET processes, chipmakers are moving towards 10nm and/or 7nm, with 5nm in R&D. But as they move down the process roadmap, they will face a new set of fab challenges. In addition to lithography and interconnects, there is metrology. Metrology, the science of measurements, is used to characterize tiny films and structures. It helps to boost yi... » read more

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