Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond


In 5nm FinFET technology and beyond, SRAM cell size reduction to 6 tracks is required with a fin pitch of 24nm. Fin depopulation is mandatory to enable area scaling, but it becomes challenging at small pitches. In the first part of our study, we simulate a FinFET process flow with various fin cut approaches to obtain a 3D model of a FinFET SRAM device. Layout dependent effects on silicon and pr... » read more

New Patterning Options Emerging


Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

Variation Spreads At 10/7nm


Variation between different manufacturing equipment is becoming increasingly troublesome as chipmakers push to 10/7nm and beyond. Process variation is a well-known phenomenon at advanced nodes. But some of that is actually due to variations in equipment—sometimes the exact same model from the same vendor. Normally this would fall well below the radar of the semiconductor industry. But as t... » read more