tag: SiC

Enhancing AI Datacenter PSUs With Hybrid-Si, SiC, And GaN Power Devices
By Infineon - 30 Apr, 2025 - Comments: 0

The rapid growth of artificial intelligence (AI) is driving an unprecedented demand for processing power in data centers, resulting in a surge in power demand at the rack level. With the existing data center rack sizes, the challenge is to deliver more power and efficiency in the same physical footprint apart from costs and cooling. To address this, Infineon has developed a range of hybrid powe... » read more

Electrifying Everything: Power Moves Toward ICs
By Gregory Haley - 23 Jan, 2025 - Comments: 0

As electronic systems grow increasingly complex and energy-intensive, traditional power management methods — centered on centralized systems and external components — are proving inadequate. The next wave of innovation is to bring power control closer to the action — directly on the chip or into a heterogeneous package. This change is driven by a relentless pursuit of efficiency, scala... » read more

Improving GaN Device Architectures
By Katherine Derbyshire - 23 Jan, 2025 - Comments: 0

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits use different materials for different parts of the overall operating range. GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and... » read more

Challenges In Powering Electrification With GaN And SiC
By Katherine Derbyshire - 17 Dec, 2024 - Comments: 0

The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications. For control transistors to handle power surges, breakdown voltages should be at least triple the expected operating voltage — 1.2 kilovolts or more for many electric vehicle applications, and ... » read more

Silicon Carbide And Gallium Nitride Bring New Challenges For Semiconductor Test
By Jeorge Hurtarte - 12 Nov, 2024 - Comments: 0

In the era of megatrends such as electric vehicles (EVs), new technologies are emerging to keep up with evolving demands. One example of this is the evolution of compound semiconductors that use silicon carbide (SiC) and gallium nitride (GaN) for high-performance power systems. Innovating test protocols to handle wide bandgap materials For many power-related applications, the semiconductor in... » read more

Sustainable Rail Transportation With High Power SiC Modules: Part 2
By Diana Car - 10 Oct, 2024 - Comments: 0

In the first part of this blog, we had a look at how energy-efficient high-power modules contribute to the decarbonization of railway transportation. This part will focus on the future of traction: high-power silicon carbide modules, their key features, and the multiple system benefits they enable. Silicon carbide power modules and hybrid-propulsion trains: It’s a match! As we inch toward... » read more

Sustainable Rail Transportation With High Power SiC Modules: Part 1
By Diana Car - 05 Sep, 2024 - Comments: 0

The process of electrification of railways, though crucial for achieving net-zero climate targets, is nevertheless far from being complete.  Let's delve into how high-power semiconductor technologies are accelerating the decarbonization of rail transport, making it cleaner, safer, and smarter. Decarbonization of transportation: Unraveling the global picture According to the International Ene... » read more

SiC Power Electronics Packaging: Floating Die Structure and Liquid Metal Fluidic Connection (Cambridge U. )
By Technical Paper Link - 17 Jul, 2024 - Comments: 0

A new technical paper titled "Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging" was published by researchers at Cambridge University. Abstract "Coefficients of thermal expansion (CTE) of various materials in packaging structure layers vary largely, causing significant thermomechanical stress in power electroni... » read more

Automotive Semiconductors Require Integrated Test Solution
By Toni Dircherl - 09 Jul, 2024 - Comments: 0

The automotive semiconductor test market is experiencing organic growth as chipmakers produce higher volumes of devices serving an array of automotive applications. In addition, the range of applications for automotive-grade semiconductors is evolving as the technology advances. Manufacturers of automated test equipment (ATE) are adapting to ensure their systems can handle devices ranging from ... » read more

Power Electronic Packaging for Discrete Dies
By Technical Paper Link - 20 Jun, 2024 - Comments: 0

A technical paper titled “Substrate Embedded Power Electronics Packaging for Silicon Carbide MOSFETs” was published by researchers at University of Cambridge, University of Warwick, Chongqing University, and SpaceX. Abstract: "This paper proposes a new power electronic packaging for discrete dies, namely Standard Cell which consists of a step-etched active metal brazed (AMB) substrate and... » read more

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