tag: SiC

Power/Performance Bits: Oct. 29
By Jesse Allen - 29 Oct, 2019 - Comments: 0

Chip scanning Researchers at the University of Southern California and the Paul Scherer Institut in Switzerland developed an x-ray technique to non-destructively scan chips to make sure they conform to specifications. Such a system could be used to identify manufacturing defects or malicious alterations, the team said. Called ptychographic x-ray laminography, the technique utilizes x-rays f... » read more

New SiC Power Modules Deliver Greater Power Densities In Smaller Packages Than Si IGBTs
By Wolfspeed, a Cree Company - 16 Oct, 2019 - Comments: 0

With the shift toward electrical power for a wide range of applications, including power generation, energy storage, and transportation, comes the need to build higher performance electrical conversion and control systems to fuel the future of electric-powered systems. To do so, there is a greater demand for more compact, higher power density, and high temperature operating power modules. Un... » read more

Design Comparison of SiC MOSFETs for Linear-Mode Operation
By Technical Paper Link - 02 Oct, 2019 - Comments: 0

Source: US Army Research Lab Authors: Heather O'Brien, Damian Urciuoli, Aderinto Ogunniyi, Brett Hull August 2019 "Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as chan... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 27 Sep, 2019 - Comments: 0

Chipmakers United Microelectronics Corp. (UMC) has satisfied all closing conditions for the full acquisition of Mie Fujitsu Semiconductor Ltd. (MIFS), the former 300mm wafer foundry joint venture between UMC and Fujitsu Semiconductor Ltd. (FSL). The completion of the acquisition is scheduled for Oct. 1. In 2014, FSL and UMC agreed for UMC to acquire a 15.9% stake in MIFS from FSL through pr... » read more

SiC Market Moves Into Overdrive
By Mark LaPedus - 19 Sep, 2019 - Comments: 0

The silicon carbide (SiC) power semiconductor market continues to heat up in the automotive arena. In recent times, several automotive OEMs have formed a series of alliances with SiC device makers, and for good reason. In a major way, many automotive OEMs are entering or expanding their efforts in the battery-electric car market. SiC power semiconductors are among the key components used ... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 13 Sep, 2019 - Comments: 0

Chipmakers and OEMs Delphi Technologies is in volume production with a 800 volt silicon carbide (SiC) inverter for next-generation electric and hybrid vehicles. The inverter extends electric vehicle (EV) ranges. It also halves the charging times compared with today's 400 volt systems. In a separate announcement, Delphi Technologies and Cree have announce a partnership to utilize SiC semicon... » read more

Manufacturing Bits: Sept. 3
By Mark LaPedus - 03 Sep, 2019 - Comments: 1

Modeling SiC defects The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). Defectivity is an issue for SiC, a compound semiconductor material based on silicon and carbon. Today, SiC is used to make specialized power semiconductors for high-voltage applications, such as electric ... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 16 Aug, 2019 - Comments: 0

Chipmakers In its latest move to cut costs and focus on its core business, GlobalFoundries (GF) has announced plans to jettison its U.S. photomask operations in Burlington, Vt., but the foundry vendor will maintain a stake in its joint venture mask unit. Under the plan, Toppan Photomasks will acquire certain assets of GF’s Burlington photomask facility. “GF is transferring its mask tool... » read more

Silicon Carbide’s Superpowers
By Llew Vaughan-Edmunds - 15 Aug, 2019 - Comments: 0

As we enter a new computing era driven by the Internet of Things (IoT), Big Data and Artificial Intelligence (AI), demand is growing for more energy-efficient chips. In this context, we usually think about Moore’s Law and reducing the size of transistors. However, advances in power semiconductors are not governed by node size reduction. Silicon power switches, such as MOSFETs and IGBTs, ar... » read more

Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
By Wolfspeed, a Cree Company - 14 Aug, 2019 - Comments: 0

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performance of the 28 V and 40 V technologies, with 400 nm and 250 nm gate length, has been characterized with DC accelerated life test (DC-ALT), f... » read more

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