tag: SiC

Why Is The Power Device Market So Hot Right Now?
By Dermott Lynch - 25 Jan, 2024 - Comments: 0

Growing adoption of electric vehicles (EVs) and renewable energy sources is putting the spotlight on power semiconductor devices. These power devices have always been essential in determining the efficiency of a variety of systems, from small household electronics to equipment used in outer space. But as calls to reduce carbon emissions get louder, the market for these chips continues to flouri... » read more

Using TCAD To Simulate Wide-Bandgap Materials For Electronics Design
By Shela Aboud - 22 Jan, 2024 - Comments: 0

Wide-bandgap (WBG) semiconductors are a class of materials that can offer a range of advantages over silicon. These materials can operate at higher voltages and higher temperatures, serving as critical enablers of innovation in Power and RF applications and functioning in a wider range of environments that are sometimes extreme. Electronics applications benefit from these wide-bandgap materials... » read more

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors
By Technical Paper Link - 15 Jan, 2024 - Comments: 0

A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. Abstract: "We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Materi... » read more

Application-Oriented Testing Of SiC Power Semiconductors
By NI - 09 Jan, 2024 - Comments: 0

SiC (silicon carbide) has established itself as an important material in the semiconductor market because it has many outstanding properties. In comparison with silicon, SiC offers a higher electrical breakdown voltage, resulting in improved component performance and efficiency. It also allows for operation at higher temperatures, which makes heat dissipation easier and enables improved perform... » read more

Using FTIR To Improve SiC Power Device Performance
By Nick Keller - 09 Jan, 2024 - Comments: 0

The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst other compound semiconductor-based power devices such as gallium nitride (GaN) to change the world around us is even more impressive. Thanks to the role that SiC-based devices play in the increase... » read more

Big Shifts In Power Electronics Packaging
By Laura Peters - 16 Nov, 2023 - Comments: 0

The power semiconductor market is poised for remarkable growth in the next several years, fueled by the adoption of electric vehicles and renewable energy, but it also driving big changes in the packaging needed to protect and connect these devices. Packaging is playing an increasingly critical role in the transition to higher power densities, enabling more efficient power supplies, power deli... » read more

Addressing Trench Structures And Larger Wafers For Power Devices
By Vamsi Velidandla - 07 Nov, 2023 - Comments: 0

Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance (ROHM)
By Technical Paper Link - 06 Oct, 2023 - Comments: 0

A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Abstract: "The intrinsic gate resistance ( Rg_in) , which is a novel resistance factor embedded in transistors, was determined for silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFE... » read more

Week In Review: Manufacturing, Test
By Karen Heyman - 25 Aug, 2023 - Comments: 0

Intel aims to quadruple capacity for its most advanced chip packaging services by 2025, including with a new facility in Malaysia, per Nikkei Asia. Huawei is building a collection of secret semiconductor fabrication facilities across China to let the company skirt U.S. sanctions, SIA warned in a presentation seen by Bloomberg. It’s acquired at least two existing plants and is building at l... » read more

Power Semis Usher In The Silicon Carbide Era
By Laura Peters - 21 Aug, 2023 - Comments: 1

Silicon carbide production is ramping quickly, driven by end market demand in automotive and price parity with silicon. Many thousands of power semiconductor modules already are in use in electric vehicles for on-board charging, traction inversion, and DC-to-DC conversion. Today, most of those are fabricated using silicon-based IGBTs. A shift to silicon carbide-based MOSFETs doubles the powe... » read more

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